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IRF7205TRPBF

器件型号:IRF7205TRPBF
器件类别:分立半导体    MOS(场效应管)   
厂商:IR
国际整流器公司 (简称IR) 是全球功率半导体和管理方案领导厂商。IR 的模拟及混合信号集成电路、先进电路器件、集成功率系统和器件广泛应用于驱动高性能运算设备及降低电机的能耗 (电机乃全球最大之耗能设备) ,是众多国际知名厂商开发下一代计算机、节能电器、照明设备、汽车、卫星系统及宇航系统的电源管理基准。
厂商官网:http://www.irf.com
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器件描述

漏源电压(Vdss):30V 连续漏极电流(Id)(25°C 时):4.6A 栅源极阈值电压:3V @ 250uA 漏源导通电阻:70mΩ @ 4.6A,10V 最大功率耗散(Ta=25°C):2.5W(Tc) 类型:P沟道 大电流MOS管

参数
属性参数值
漏源电压(Vdss)30V
连续漏极电流(Id)(25°C 时)4.6A
栅源极阈值电压3V @ 250uA
漏源导通电阻70mΩ @ 4.6A,10V
最大功率耗散(Ta=25°C)2.5W(Tc)
类型P沟道

IRF7205TRPBF产品介绍

PD - 95021
IRF7205PbF
Adavanced Process Technology
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
l
Lead-Free
Description
l
HEXFET
®
Power MOSFET
S
1
2
3
4
8
7
A
D
D
D
D
S
S
G
V
DSS
= -30V
R
DS(on)
= 0.070Ω
I
D
= -4.6A
6
5
Top View
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
‚
Junction and Storage Temperature Range
Max.
-4.6
-3.7
-15
2.5
0.020
± 20
-3.0
-55 to + 150
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
R
θJA
Maximum Junction-to-Ambient
„
Parameter
Min.
–––
Typ.
–––
Max.
50
Units
°C/W
2/18/04
IRF7205PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
-30
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250µA
-0.024 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.070
V
GS
= -10V, I
D
= -4.6A
ƒ
––– 0.130
V
GS
= -4.5V, I
D
= -2.0A
ƒ
––– -3.0
V
V
DS
= V
GS
, I
D
= -250µA
6.6 –––
S
V
DS
= -15V, I
D
= -4.6A
ƒ
––– -1.0
V
DS
= -24V, V
GS
= 0V
µA
––– -5.0
V
DS
= -15V, V
GS
= 0V, T
J
= 70 °C
––– -100
V
GS
= -20V
nA
––– 100
V
GS
= 20V
27
40
I
D
= -4.6A
5.2 –––
nC V
DS
= -15V
7.5 –––
V
GS
= -10V
ƒ
14
30
V
DD
= -15V
21
60
I
D
= -1.0A
ns
97 150
R
G
= 6.0Ω
71 100
R
D
= 10Ω
ƒ
2.5
4.0
870
720
220
–––
nH
–––
–––
–––
–––
pF
D
Between lead,6mm(0.25in.)
from package and center
of die contact
V
GS
= 0V
V
DS
= -10V
ƒ = 1.0MHz
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)

Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -2.5
showing the
A
G
integral reverse
––– ––– -15
p-n junction diode.
S
––– ––– -1.2
V
T
J
= 25°C, I
S
= -1.25A, V
GS
= 0V
ƒ
––– 70 100
ns
T
J
= 25°C, I
F
= -4.6A
––– 100 180
nC
di/dt = 100A/µs
ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:

Repetitive rating; pulse width limited by
max. junction temperature.
ƒ
Pulse width
300µs; duty cycle
2%.
‚
I
SD
-4.6A, di/dt
90A/µs, V
DD
V
(BR)DSS
,
T
J
150°C
„
Surface mounted on FR-4 board, t
10sec.
IRF7205PbF
IRF7205PbF
C,
12
IRF7205PbF
V
DS
V
GS
R
G
-10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
D.U.T.
+
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
V
GS
10%
90%
V
DS
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
10
0.1
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
-
V
DD
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