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HY5110W

器件型号:HY5110W
器件类别:分立半导体    MOS(场效应管)   
厂商:HUAYI(华羿微)
华羿微电子股份有限公司成立于2017年6月28日,位于西安经济技术开发区草滩生态产业园,占地面积200.775亩。企业注册资本2.6亿元,天水华天电子集团股份有限公司是公司的控股股东,持有公司88.46%的股权。
厂商官网:http://www.hymexa.com/
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器件描述

漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):316A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:2.5mΩ @ 158A,10V 最大功率耗散(Ta=25°C):500W 类型:N沟道 N沟道场效应管 100V 316A N-MOSFET 导通电阻2.1mR TO-247-3

参数
属性参数值
漏源电压(Vdss)100V
连续漏极电流(Id)(25°C 时)316A
栅源极阈值电压4V @ 250uA
漏源导通电阻2.5mΩ @ 158A,10V
最大功率耗散(Ta=25°C)500W
类型N沟道

HY5110W产品介绍

HY5110W/A
N-Channel Enhancement Mode MOSFET
Features
100V/316A
R
DS(ON)
=2.1 m
(typ.) @ V
GS
=10V
Avalanche Rated
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
G
D
S
G
D
S
TO-247-3L
TO-3P-3L
Applications
D
Power Management for Inverter Systems.
G
N-Channel MOSFET
S
Ordering and Marking Information
Package Code
ÿ
ÿ
YYXXXJWW G YYXXXJWW G
W
A
HY5110 HY5110
W : TO-247-3L
Date Code
YYXXX WW
A : TO-3P-3L
Assembly Material
G : Lead Free Device
HOOYI
lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS.
HOOYI
lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.
HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
Note:
advise customers to obtain the latest version of relevant information to verify before placing orders.
HOOYI
reserves the right to make changes to improve reliability or manufacturability without notice, and
1
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141225
HY5110W/A
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
θJC
R
θJA
E
AS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
Parameter
Rating
100
±25
175
-55 to 175
316
1085**
316
214
500
250
0.3
40
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C/W
Mounted on Large Heat Sink
Avalanche Ratings
Avalanche Energy, Single Pulsed
L=0.5mH
2621***
mJ
Note: * Repetitive rating ; pulse width limiited by junction temperature
** Drain current is limited by junction temperature
*** VD=80V
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
V
SD
*
t
rr
Q
rr
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Parameter
(T
C
= 25°C Unless Otherwise Noted)
Test Conditions
HY5110
Min.
Typ.
Max.
Unit
V
GS
=0V, I
DS
=250µA
V
DS
=100V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
=10V, I
DS
=158A
I
SD
=158 A, V
GS
=0V
I
SD
=158 A, dl
SD
/dt=100A/µs
100
-
-
2
-
-
-
-
-
3
-
2.1
-
1
10
4
±100
2.5
V
µA
V
nA
mΩ
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
0.8
74
138
1.3
-
-
V
ns
nC
2
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HY5110W/A
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
C
= 25°C Unless Otherwise Noted)
Test Conditions
HY5110
Min.
Typ.
Max.
Unit
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=50V, R
G
=6
Ω,
I
DS
=158A, V
GS
=10V,
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
0.5
16465
1558
850
58
49
120
90
-
-
-
-
-
-
-
-
ns
pF
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=80V, V
GS
=10V,
I
DS
=158A
-
-
-
356
50
129
-
-
-
nC
Note * : Pulse test ; pulse width
≤300
µ
s, duty cycle≤2%.
3
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HY5110W/A
Typical Operating Characteristics
Power Dissipation
I
D
- Drain Current (A)
500
320
280
240
200
160
120
Drain Current
P
tot
- Power (W)
limited by package
400
300
200
100
T
C
=25 C
0
0
20 40 60 80 100 120 140 160 180 200
o
80
40
0
T
C
=25 C,V
G
=10V
20 40 60 80 100 120 140 160 180 200
o
T
c
- Case Temperature (°C)
Safe Operation Area
1000
T
c
- Case Temperature (°C)
100us
I
D
- Drain Current (A)
100
it
im
)L
n
(o
ds
R
10ms
1ms
10
DC
1
0.1
1
10
100
400
V
DS
- Drain - Source Voltage (V)
Thermal Transient Impedance
1
Normalized Effective Transient
Duty = 0.5
0.1
0.2
0.1
0.01
0.05
0.02
0.001
0.01
Single
Mounted on minimum pad
o
R
θ
JA
: 40 C/W
0.0001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (sec)
4
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HY5110W/A
Typical Operating Characteristics (Cont.)
Output Characteristics
400
V
GS
= 6,7,8,9,10V
350
300
3.0
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
5.5V
2.5
V
GS
=10V
I
D
- Drain Current (A)
250
200
150
100
50
0
0.0
5V
4.5V
2.0
1.5
1.0
0.5
1.0
1.5
2.0
2.5
3.0
0
80
160
240
320
400
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Drain-Source On Resistance
4.0
Gate Threshold Voltage
1.6
I
DS
=250
µ
A
I
DS
=158A
R
DS(ON)
- On - Resistance (mΩ)
3.5
Normalized Threshold Vlotage
4
5
6
7
8
9
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
3.0
2.5
2.0
1.5
1.0
0
25
50
75 100 125 150 175
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
5
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