Storage Temperature ........................................................................................................................... -50 ~ +150
°C
Junction Temperature ................................................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ................................................................................................................. 1.25 W
•
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage....................................................................................................................... 160 V
BV
CEO
Collector to Emitter Voltage.................................................................................................................... 160 V
BV
EBO
Emitter to Base Voltage.............................................................................................................................. 5 V
I
C
Collector Current ........................................................................................................................................ 100 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
V
BE(on)
*h
FE1
*h
FE2
f
T
Cob
Min.
160
160
5
-
-
-
60
30
145
-
Typ.
-
-
-
-
-
-
-
-
-
3.8
Max.
-
-
-
10
2
1.5
320
-
-
-
MHz
pF
Unit
V
V
V
uA
V
V
I
C
=10uA
I
C
=1mA
I
E
=10uA
V
CB
=140V
I
C
=30mA, I
B
=3mA
I
C
=10mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
I
C
=1mA, V
CE
=5V
I
C
=10mA , V
CE
=5V
V
CB
=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of hFE1
Rank
Range
B
60-120
C
100-200
D
160-320
HSD1609
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
10000
1000
Spec. No. : HE6606
Issued Date : 1993.03.15
Revised Date : 2005.08.18
Page No. : 2/4
Saturation Voltage & Collector Current
125 C
75 C
o
hFE
25 C
100
o
Saturation Voltage (mV)
1000
o
100
125 C
o
75 C
o
10
hFE @ VCE=5V
1
0.1
1
10
100
1000
25 C
V
CE(sat)
@ I
C
=10I
B
o
10
0.1
1
10
100
1000
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Saturation Voltage & Collector Current
10000
1000
ON Voltage & Collector Current
25 C
o
Saturation Voltage (mV)
ON Voltage (mV)
1000
125 C
o
75 C
o
100
125 C
75 C
25 C
V
CE(sat)
@ I
C
=20I
B
o
o
o
V
BE(ON)
@ I
C
=5V
10
0.1
1
10
100
1000
10000
100
0.1
1
10
100
1000
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Cutoff Frequency & Collector Current
1000
10
Capacitance & Reverse-Biased Voltage
Cutoff Frequency (MHz)
.
.
100
V
CE
=5V
Capacitance (pF)
Cob
10
1
10
100
1000
1
0.1
1
10
100
1000
Collector Current (mA)
Reverse Biased Voltage (V)
HSD1609
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6606
Issued Date : 1993.03.15
Revised Date : 2005.08.18
Page No. : 3/4
Safe Operating Area
10000
1000
Collector Current (mA)
100
P
T
=1ms
10
P
T
=100ms
P
T
=1s
1
1
10
100
1000
Forward Voltage (V)
TO-126ML Dimension
A
C
D
E
H
SD
1609
Marking:
L
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
I
B
1
F
H
G
M
2
3
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Emitter 2.Collector 3.Base
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
Min.
7.74
10.87
0.88
1.28
3.50
2.61
13
1.18
2.88
0.68
-
3.44
1.88
0.50
Max.
8.24
11.37
1.12
1.52
3.75
3.37
-
1.42
3.12
0.84
2.30
3.70
2.14
0.51
*: Typical, Unit: mm
K
J
N
3-Lead TO-126ML
Plastic Package
HSMC Package Code: D
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
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Table of ContentsItem PageAEC- Q101 STRESS TEST QUALIFICATIONFOR AUTOMOTIVE GRADE DISCRETE SEMICONDUCTORS 1Appendix 1 - Definition of a Qualification Family 17Appendix 2 - Certific...
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