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HMBT2222A

器件型号:HMBT2222A
器件类别:分立半导体   
厂商:台湾华昕(HSMC)
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器件描述

40V 0.6A NPN外延平面型晶体管

产品简介

功能特点

产品名称:40V 0.6A NPN外延平面型晶体管


产品型号:HMBT2222A


产品说明:


The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications.



产品特征:


High frequency current gain


High Speed Switching



参数:


Type: NPN


BVCEO: 40V


IC: 0.6A


PD: 0.225W


hFE: MIN 100


hFE: Max. 300


VCE(sat): Max.0. 5V


RoHS: PF(无铅),HF(无卤)


Package: SOT-23

HMBT2222A产品介绍

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6822
Issued Date : 1993.06.30
Revised Date :2010.08.06
Page No. : 1/5
HMBT2222A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT2222A is designed for general purpose amplifier and high-speed switching,
medium-power switching applications.
SOT-23
Features
High frequency current gain
High Speed Switching
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°C
Junction Temperature .................................................................................................................................... +150
°C
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C)............................................................................................................... 225 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage........................................................................................................................... 75 V
V
CEO
Collector to Emitter Voltage ....................................................................................................................... 40 V
V
EBO
Emitter to Base Voltage................................................................................................................................ 6 V
I
C
Collector Current ........................................................................................................................................ 600 mA
Thermal Characteristic
Symbol
R
θja
Characteristic
Thermal Resistance, junction to ambient (T
A
=25
o
C)
Max.
556
Unit
o
C/W
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEX
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)1
*V
BE(sat)2
*h
FE1
*h
FE2
*h
FE3
*h
FE4
*h
FE5
f
T
Min.
75
40
6
-
-
-
-
-
0.6
-
35
50
75
100
40
300
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
500
1.0
1.2
2.0
-
-
-
300
-
-
MHz
Unit
V
V
V
nA
nA
nA
mV
V
V
V
I
C
=10uA
I
C
=10mA
I
C
=10uA
V
CB
=60V
V
CE
=60V, V
EB(OFF)
=3V
V
EB
=3V
I
C
=380mA, I
B
=10mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=100uA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=150mA
V
CE
=10V, I
C
=500mA
V
CB
=20V, I
C
=20mA, f=100MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
HMBT2222A
HSMC Product Specification
Test Conditions
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
75
o
C
125 C
o
Spec. No. : HE6822
Issued Date : 1993.06.30
Revised Date :2010.08.06
Page No. : 2/5
Current Gain & Collector Current
1000
75
o
C
125
o
C
25
o
C
25
o
C
hFE
hFE
100
100
hFE @ V
CE
=1V
hFE @ V
CE
=10V
10
0.1
1
10
100
1000
10
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
1000
10000
Saturation Voltage & Collector Current
V
CE(sat)
@ I
C
=10I
B
V
CE(sat)
@ I
C
=38I
B
Saturation Voltage (mV)
Saturation Voltage (mV)
75
o
C
1000
75
o
C
25
o
C
125
o
C
100
25
o
C
125
o
C
100
10
0.1
1
10
100
1000
10
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
Capacitance & Reverse-Biased Voltage
100
V
BE(sat)
@ I
C
=10I
B
Saturation Voltage (mV)
75
o
C
1000
25
o
C
Capacitance (pF)
10
Cob
125
o
C
100
0.1
1
10
100
1000
1
0.1
1
10
100
Collector Current-I
C
(mA)
Reverse Biased Voltage (V)
HMBT2222A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Cutoff Frequency & IC
1000
250
Spec. No. : HE6822
Issued Date : 1993.06.30
Revised Date :2010.08.06
Page No. : 3/5
PD-Ta
V
CE
=20V
Power Dissipation-PD (mW)
200
Cutoff Frequency (MHz)
..
.
150
100
100
50
10
1
10
100
1000
0
0
50
100
o
150
200
Collector Current (mA)
Ambient Temperature-Ta ( C)
HMBT2222A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
Spec. No. : HE6822
Issued Date : 1993.06.30
Revised Date :2010.08.06
Page No. : 4/5
DIM
A
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
A
L
3
1
B S
P
B
Pb Free: "
.
"
Halogen Free: "
. .
"
Normal: None
C
D
G
H
J
K
L
S
V
1
2
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family, flammability
solid burning class: UL94V-0
V
G
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
*: Typical, Unit: mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Regional Sales Headquarters:
Head Office(HSMC
CORP.): 3F., No.72, Sec.2, Nanjing E. Rd., Taipei, Taiwan, R.O.C.
Tel: +886-2-2521-2056, Fax: +886-2-2521-0452
Shanghai Office(AVANTICS):
No.399, Cai Lum Rd. Zhangjiang Technology Industrial Park Pudong, Shanghai 201210, China
Tel: +86-21- 6163-7118, Fax: +86-21-6163-7006
HMBT2222A
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE6822
Issued Date : 1993.06.30
Revised Date :2010.08.06
Page No. : 5/5
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HMBT2222A
HSMC Product Specification
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