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HI3669

器件型号:HI3669
器件类别:分立半导体   
厂商:台湾华昕(HSMC)
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器件描述

80V 2A NPN外延平面型晶体管

产品简介

功能特点

产品名称:80V 2A NPN外延平面型晶体管


产品型号:HI3669


产品描述:


The HI3669 is designed for using in power amplifier applications, power switching application.



参数:


Type: NPN


BVCEO: 80V


IC: 2A


PD: 1.25W


hFE: MIN 300


hFE: Max. -


VCE(sat): Max. 0.5V


RoHS: PF(无铅)


Package: TO-251


HI3669产品介绍

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9029
Issued Date : 1997.11.14
Revised Date : 2005.07.13
Page No. : 1/4
HI3669
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI3669 is designed for using in power amplifier applications, power switching
application.
TO-251
Absolute Maximum Ratings
(T
A
=25°C)
Maximum Temperatures
Tstg Storage Temperature.................................................................................................................... -55 ~ +150
°C
Tj Junction Temperature ................................................................................................................................ +150
°C
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ................................................................................................................. 1.25 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Breakdown Voltage...................................................................................................... 80 V
BV
CEO
Collector to Emitter Breakdown Voltage................................................................................................... 80 V
BV
EBO
Emitter to Base Emitter Breakdown Voltage .............................................................................................. 5 V
I
C
Collector Current (DC) ....................................................................................................................................... 2 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
f
T
Cob
T
on
T
stg
T
f
Min.
80
80
5
-
-
-
-
300
-
-
-
-
-
Typ.
-
-
-
-
-
0.15
0.9
-
100
30
0.2
1.0
0.2
Max.
-
-
-
1000
1000
0.5
1.2
-
-
-
-
-
-
MHz
pF
uS
uS
uS
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Unit
V
V
V
nA
nA
V
V
I
C
=100uA
I
C
=10mA
I
E
=100uA
V
CB
=80V
V
EB
=5V
Test Conditions
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=500mA
V
CB
=10V, f=1MHz
I
B1
=-I
B2
=50mA, Duty Cycle≤1%
HI3669
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
10000
100000
Spec. No. : HE9029
Issued Date : 1997.11.14
Revised Date : 2005.07.13
Page No. : 2/4
Saturation Voltage & Collector Current
V
CE
=10V
100
Saturation Voltage (mV)
1000
10000
hFE
1000
10
100
V
CE(sat)
@ I
C
=20I
B
1
0.1
1
10
100
1000
10000
10
0.1
1
10
100
1000
10000
Collector Current (mA)
Collector Current (mA)
Saturation Voltage & Collector Current
10000
Capacitance & Reverse-Biased Voltage
100.0
Saturation Voltage (mV)
Capacitance (pF)
1000
10.0
Cob
V
BE(sat)
@ I
C
=20I
B
100
0
1
10
100
1000
10000
1.0
0.1
Collector Current (mA)
1.0
10.0
Reverse Biased Voltage (V)
100.0
Safe Operating Area
100000
10000
Collector Current (mA)
1000
100
P
T
=1ms
P
T
=100ms
P
T
=1s
10
1
1
10
100
1000
Forward Voltage (V)
HI3669
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-251 Dimension
A
Tab
Spec. No. : HE9029
Issued Date : 1997.11.14
Revised Date : 2005.07.13
Page No. : 3/4
M
F
a1
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
I
C
G
Date Code
3 6 6 9
Control Code
Note: Green label is used for pb-free packing
1
2
3
Pin Style: 1.Base 2/Tab.Collector 3.Emitter
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
F
G
H1
K
K1
L
M
a1
a2
Min.
6.35
4.80
1.30
5.40
6.75
0.50
0.40
0.90
2.20
0.40
-
Max.
6.80
5.50
1.70
6.25
8.00
0.90
0.90
1.50
2.40
0.65
*2.30
L
K
K1
H1
a1
*: Typical, Unit: mm
a2
a2
3-Lead TO-251
Plastic Package
HSMC Package Code: I
A
B
C
D
a1
E
G
Marking:
M
F
y1
a1
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
I
3 6 6 9
Date Code
Control Code
I
H
y1
y1
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2.Collector 3.Emitter
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
K
K1
H1
a2
y2
a2
y2
a1
DIM
A
B
C
D
E
F
G
H
H1
I
J
K
K1
M
a1
a2
y1
y2
Min.
6.40
-
5.04
-
0.40
0.50
5.90
-
-
-
-
-
-
2.20
0.40
2.10
-
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
*1.80
*9.30
*16.10
*0.80
0.96
*0.76
2.40
0.60
2.50
5
o
3
o
3-Lead TO-251
Plastic Package
HSMC Package Code: I
*: Typical, Unit: mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HI3669
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HE9029
Issued Date : 1997.11.14
Revised Date : 2005.07.13
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HI3669
HSMC Product Specification
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