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CRJD650N65GC

器件型号:CRJD650N65GC
器件类别:MOSFET   
厂商:华润微(CRMICRO)
公司以功率半导体器件、功率/模拟集成电路为产业基础,面向工业电子、消费电子、汽车电子、5G通讯市场。具备功率器件、GaN、MEMS传感器等技术开发和制造平台,并可提供高可靠性功率器件、模块等产品和应用方案。公司开发的低压、中压和高压功率器件产品,可广泛应用于电动车、太阳能,汽车电子、手机快充、白色家电、通用开关、电源等行业。
厂商官网:https://www.crmicro.com/
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器件描述

功率器件_MOSFET_300V-900V NMOS

参数
PARTNUMBERCRJD650N65GC
PACKAGETO-252
POLARITYN
VDS650
IDA7
VTYPE10600
VMAX10680
VTYPE45-
VMAX45-
VGSMIN3.5
VGSMAX4.5
QGNC15
CISSPF507
CRTIME202006
RN155

CRJD650N65GC产品介绍

CRJD650N65GC
华润微电子(重庆)有限公司
Features
• CRM(CQ) Super_Junction technology
• Much lower Ron*A performance for On-state efficiency
• Much lower FOM for fast switching efficiency
VDS
R
DS(on)_typ
I
D
Applications
• LED/LCD/PDP TV and monitor Lighting
• Solar/Renewable/UPS-Micro Inverter System
• Charger
• Power Supply
650V
0.6Ω
7A
SJMOS N-MOSFET 650V, 0.6Ω, 7A
Product Summary
100% Avalanche Tested
Package Marking and Ordering Information
Part #
CRJD650N65GC
Marking
Package
TO-252
Packing
Tape&Reel
Reel Size
N/A
Tape Width
N/A
Qty
2500pcs
-
Absolute Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
T
C
= 25°C
T
C
= 100°C
Pulsed drain current (T
C
= 25°C, t
p
limited by T
jmax
)
Avalanche energy, single pulse (L=60mH, Rg=30Ω)
Gate-Source voltage
Power dissipation (T
C
= 25°C)
Operating junction and storage temperature
I
D pulse
E
AS
V
GS
P
tot
T
j
,
T
stg
I
D
7
4.0
28
90
±30
133
-55...+150
A
mJ
V
W
°C
A
Symbol
V
DS
Value
650
Unit
V
©China Resources Microelectronics (Chongqing) Limited
Page 1
CRJD650N65GC
华润微电子(重庆)有限公司
Thermal Resistance
Parameter
Thermal resistance, junction – case. Max
Thermal resistance, junction – ambient. Max
Symbol
R
thJC
R
thJA
Value
0.94
95
Unit
°C/W
SJMOS N-MOSFET 650V, 0.6Ω, 7A
Electrical Characteristic
(at Tj = 25 °C, unless otherwise specified)
Parameter
Symbol
Value
min.
typ.
max.
Unit
Test Condition
Static Characteristic
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain
current
BV
DSS
V
GS(th )
650
3.5
-
4
-
4.5
V
V
V
GS
=0V, I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=650V,V
GS
=0V
I
DSS
-
-
Gate-source leakage current
I
GSS
-
-
5
0.3
1
-
80
nA
µA
T
C
=25°C
T
C
=150°C
V
GS
=±30V,V
DS
=0V
V
GS
=10V, I
D
=3.5A,
Drain-source on-state
resistance
Transconductance
R
DS(on)
-
-
g
fs
-
0.6
1.5
8.7
0.68
-
-
S
T
C
=25°C
T
C
=150°C
V
DS
=20V,I
D
=3.5A
Dynamic Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Total Charge
Gate-Source charge
Gate-Drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate resistance
C
iss
C
oss
C
rss
Q
G
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
G
-
-
-
-
-
-
-
-
-
-
-
507
26
22
15
3.8
6
18
12
48
53
2.5
-
-
-
-
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=0V,
f=1MHz
ns
T
j
=25°C, V
GS
=10V,
I
D
=3.5A, V
DS
=400V,
R
g
=25Ω
nC
V
GS
=10V, V
DS
=480V,
I
D
=3.5A, f=1MHz
pF
V
GS
=0V, V
DS
=100V,
f=1MHz
©China Resources Microelectronics (Chongqing) Limited
Page 2
CRJD650N65GC
华润微电子(重庆)有限公司
Body Diode Characteristic
Parameter
Body Diode Forward Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
Charge
Symbol
SJMOS N-MOSFET 650V, 0.6Ω, 7A
Value
min.
0.5
-
-
typ.
0.84
187
1.59
max.
1
-
-
Unit
V
ns
uC
Test Condition
V
GS
=0V,I
SD
=3.5A
Isd=3.5A
dI/dt=100A/us,Vds=1
00V
V
SD
t
rr
Q
rr
©China Resources Microelectronics (Chongqing) Limited
Page 3
CRJD650N65GC
华润微电子(重庆)有限公司
Typical Performance Characteristics
Fig 1. Output Characteristics (Tj=25℃)
14
12
10
8
I
D
(A)
6
4
2
0
-2
0
5
10
V
DS
(V)
15
Fig 2. Output Characteristics (Tj=150℃)
8
SJMOS N-MOSFET 650V, 0.6Ω, 7A
10V, 9V, 8V, 7V
6.0V
7
6
5
I
D
(A)
4
3
2
10V, 9V, 8V, 7V,6V
5.5V
5.5V
5.0V
4.5V
V
GS
=4.0V
20
5.0V
4.5V
V
GS
=4V
20
1
0
25
-1 0
5
10
V
DS
(V)
15
25
Fig 3: Transfer Characteristics
12
10
8
Fig 4: V
TH
Vs Tj Temperature
Characteristics
5
25°C
4
3
2
1
0
ID=250uA
I
D
(A)
4
2
0
-2
0
1
2
3
150°C
V
GS
(V)
4
5
6
7
8
V
TH
(V)
6
0
25
50
75
100
125
150
Temperature(
℃)
Fig 5: Rdson Vs Ids Characteristics(Tc=25℃)
1400
1300
1100
1000
900
800
700
600
500
400
0
2
4
6
8
10
12
0.5
0
25
50
75
100
125
150
175
Fig 6: Rds(on) vs. Temperature
3.0
2.5
2.0
1.5
1.0
V
GS
=10V
V
GS
=20V
R
DS(on)
_Normalized
1200
V
GS
=10V
I
D
=3.5A
R
DS(on)
(m )
I
D
(A)
Tj - Junction Temperature (°C)
©China Resources Microelectronics (Chongqing) Limited
Page 4
CRJD650N65GC
华润微电子(重庆)有限公司
SJMOS N-MOSFET 650V, 0.6Ω, 7A
Fig 7: BVDSS vs. Temperature
1.12
Fig 8: Rds(on) vs Gate Voltage
4700
1.10
1.08
4200
3700
I
D
=5.5A
=3.5A
BVdss (Nomalized)
R
DS(on)
(m )
1.06
1.04
1.02
1.00
0.98
0
25
50
75
100
125
150
175
3200
2700
2200
1700
1200
700
200
4
5
6
7
8
9
10
150°C
25°C
Tj - Junction Temperature (°C)
V
GS
(V)
Fig 9: Body-diode Forward Characteristics
1000
Fig 10: Gate Charge Characteristics
12
10
I
S
- Diode Current(A)
V
DS
=480V
I
D
=3.5A
100
V
GS
(V)
10
1
8
6
4
2
150˚C
25˚C
0.1
0
0.3
0.6
0.9
1.2
1.5
1.8
0
0
2
4
6
8
10
12
14
16
V
SD
- Diode Forward Voltage(V)
Qg (nC)
Fig 11: Capacitance Characteristics
10000
1000
100
Fig 12: Safe Operating Area
100
V
GS
=0V
f=1MHz
C - Capacitance (PF)
Ciss
I
D
(A)
10
Limited by
Rds(on)
1ms
10ms
Coss
10
1
0
0
100
200
300
400
500
600
1
Crss
0.1
Single pulse
Tc=25˚C
0.01
1
10
100
DC
V
DS
(V)
1000
V
DS
(V)
©China Resources Microelectronics (Chongqing) Limited
Page 5
CRJD650N65GC
华润微电子(重庆)有限公司
Fig 13: Max. Transient Thermal Impedance
10
SJMOS N-MOSFET 650V, 0.6Ω, 7A
1
D=0.5
0.2
Z
thJC
(˚C/W)
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
Duty factor D=t1/t2
T
JM
-T
C
=P
DM
*Z
thJC
(t)
0.001
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
t
p
(sec)
©China Resources Microelectronics (Chongqing) Limited
Page 6
CRJD650N65GC
华润微电子(重庆)有限公司
Test Circuit & Waveform
SJMOS N-MOSFET 650V, 0.6Ω, 7A
©China Resources Microelectronics (Chongqing) Limited
Page 7
CRJD650N65GC
华润微电子(重庆)有限公司
Package Outline: TO-252
SJMOS N-MOSFET 650V, 0.6Ω, 7A
Symbol
A
A1
b
b1
b2
c
D
D1
e
E
E1
F
H
L
L1
L2
Dimensions In Millimeters
Min.
2.20
0.00
0.50
0.60
5.20
0.45
5.40
4.57
2.29 BSC.
6.40
3.81
0.70
9.40
1.40
2.40
0.80
6.80
-
0.90
10.20
1.77
3.00
1.20
Max.
2.40
0.15
0.70
0.90
5.50
0.55
5.80
-
Dimensions In Inches
Min.
0.087
0.000
0.020
0.024
0.205
0.018
0.213
0.180
0.090 BSC.
0.252
0.150
0.028
0.370
0.055
0.094
0.031
0.268
-
0.035
0.402
0.070
0.118
0.047
Max.
0.094
0.006
0.028
0.035
0.217
0.022
0.228
-
©China Resources Microelectronics (Chongqing) Limited
Page 8
CRJD650N65GC
华润微电子(重庆)有限公司
Revision History
Revison
1.0
Date
2019-7-2
Major changes
Release of formal version
SJMOS N-MOSFET 650V, 0.6Ω, 7A
Disclaimer
Unless otherwise specified in the datasheet, the product is designed and qulified as a standard commercial
product and is not intended for use in applications that require extraordinary levels of quality and reliability, such
as automotive, aviation/aerospace and life-support devices or systems.
Any and all semicondutor products have certain probability to fail or malfunction, which may result in personal
injury, death or property damage. Customer are solely responsible for providing adequate safe measures when
design their systems.
CRM(CQ) reserves the right to improve product design, function and reliability without notice.
©China Resources Microelectronics (Chongqing) Limited
Page 9
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