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AP2301

器件型号:AP2301
器件类别:分立半导体    MOS(场效应管)   
厂商:ALLPOWER(铨力)
深圳铨力半导体公司研发并且生产主动元器件场效应管(MOS),主要应用于消费类电子、通信类电子、新能源、工业类电子等领域。
厂商官网:http://www.all-power.net
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器件描述

漏源电压(Vdss):20V 连续漏极电流(Id)(25°C 时):3A 栅源极阈值电压:1V @ 250uA 漏源导通电阻:110mΩ @ 3A,4.5V 最大功率耗散(Ta=25°C):1W 类型:P沟道 P沟道场效应管 MOS 20V 3A

参数
属性参数值
漏源电压(Vdss)20V
连续漏极电流(Id)(25°C 时)3A
栅源极阈值电压1V @ 250uA
漏源导通电阻110mΩ @ 3A,4.5V
最大功率耗散(Ta=25°C)1W
类型P沟道

AP2301产品介绍

2301
P-Channel 20-V(D-S) MOSFET
DATA SHEET
DESCRIPTION
The 2301 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications.
G
D
GENERAL FEATURES
S
Schematic diagram
V
DSS
-20V
@-4.5V(Typ) @-2.5V(Typ)
R
DS(ON)
64
m
R
DS(ON)
89
m
I
D
-3
A
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Marking and pin Assignment
Application
●PWM
applications
●Load
switch
●Power
management
SOT-23
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
I
D
Drain Current -Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
-20
±12
-3
-10
1
-55 To 150
Unit
V
V
A
A
W
125
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=-250μA
V
DS
=-20V,V
GS
=0V
Min
-20
-
Typ
-24
-
Max
-
-1
Unit
V
μA
Page 1
2301
P-Channel 20-V(D-S) MOSFET
I
GSS
V
GS(th)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
V
DS
=-10V,I
D
=-3A,
V
GS
=-2.5V
V
DD
=-10V,I
D
=-1A
V
GS
=-4.5V,R
GEN
=10Ω
V
GS
=±12V,V
DS
=0V
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-4.5V, I
D
=-3A
V
GS
=-2.5V, I
D
=-2A
V
DS
=-5V,I
D
=-2.8A
-
-0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DATA SHEET
±100
-1
110
140
-
-
-
-
-
-
-
-
12
-
-
-1.2
-1.3
nA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
-0.7
64
89
9.5
405
75
55
11
35
30
10
3.3
0.7
1.3
-
-
V
DS
=-10V,V
GS
=0V,
F=1.0MHz
V
GS
=0V,I
S
=1.3A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
10 sec.
3.
Pulse Test: Pulse Width
300μs, Duty Cycle
2%.
4.
Guaranteed by design, not subject to production
Page 2
2301
P-Channel 20-V(D-S) MOSFET
DATA SHEET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
t
d(on)
t
on
t
r
90%
t
d(off)
t
off
t
f
90%
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction Temperature(℃)
I
D
- Drain Current (A)
P
D
Power(W)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Rdson On-Resistance(Ω)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
I
D
- Drain Current (A)
Figure 5 Output CHARACTERISTICS
Figure 6 Drain-Source On-Resistance
Page 3
2301
P-Channel 20-V(D-S) MOSFET
DATA SHEET
I
D
- Drain Current (A)
Normalized On-Resistance
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(Ω)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Page 4
2301
P-Channel 20-V(D-S) MOSFET
DATA SHEET
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13
r(t),Normalized Effective
Transient Thermal Impedance
Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Page 5
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