电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索
 

2EZ43_AY_10001

器件型号:2EZ43_AY_10001
器件类别:分立半导体    二极管   
厂商:强茂(PANJIT)

强茂股份有限公司成立于1986年5月,为股票上市公司,并至1997年后,陆续通过ISO/TS-16949、ISO-9001、ISO-14001、OHSAS-18001等国际认证。

强茂拥有半导体上下游整合与自有核心技术的优势,主要从事整流二极体、功率半导体、突波抑制器等分离式元件产品的生产;搭配洞察市场趋势的观察利,不断推出符合市场需求的薄型化封装。

强茂以提供客护更完整的产品服务为宗旨,行销及佈局全球;全球总部位于台湾高雄,在北美、欧洲、日本、中国大六、南韩和台湾台北等地均设有分公司或是办事处提供客护最完整和及时的业务以及技术服务。

厂商官网:http://www.panjit.com.tw/
标准:  
下载文档 在线购买

2EZ43_AY_10001在线购买

供应商 器件名称 价格 最低购买 库存  
2EZ43_AY_10001 - - 点击查看 点击购买

器件描述

Zener Diode

参数
参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称强茂(PANJIT)
包装说明O-XALF-W2
Reach Compliance Code_compli
ECCN代码EAR99
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码DO-15
JESD-30 代码O-XALF-W2
端子数量2
封装主体材料UNSPECIFIED
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散2 W
标称参考电压43 V
表面贴装NO
技术ZENER
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
最大电压容差5%
工作测试电流11.6 mA

2EZ43_AY_10001产品介绍

2EZ6.8~2EZ51
SILICON ZENER DIODES
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
• Lead free in compliance with EU RoHS 2011/65/EU directive
0.300(7.6)
0.230(5.8)
1.0(25.4)MIN.
6.8 to 51 Volt
POWER
2 Watt
0.034(0.86)
0.028(0.71)
• Low inductance
• Case: JEDEC DO-15, Molded plastic over passivated junction
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: Color band denotes cathode end
• Standard packing: 52mm tape
• Weight: 0.014 ounce, 0.0397 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Max Steady State Power Dissipation @T
L
<80
O
C (Note A)
Derate above T
A
=25
O
C
Peak Forward Surge Current 8.3ms single half sine-wave
soperimposed on rated load
Thermal resistance Junction to Ambient
Junction to Lead
Operating Junction and Storage Temperature Range
S ymb o l
P
D
I
FSM
R
JA
R
JL
T
J
, T
STG
1.0(25.4)MIN.
MECHANICAL DATA
0.140(3.6)
0.104(2.6)
Va lue
2
15
60
32
-55 to + 150
Uni t
Watts
Amps
o
C/W
o
C
NOTE:
A.Mounted on infinite heat sink with L=2mm
B.Measured on 8.3ms, and single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
February 21,2014-REV.04
PAGE . 1
2EZ6.8~2EZ51
Nomi nal Zene r Vo ltag e
Part Number
No m. V
2.0 Watt ZENER
2EZ6.8
2EZ7.5
2EZ8.2
2EZ8.7
2EZ9.1
2EZ10
2EZ11
2EZ12
2EZ13
2EZ14
2EZ15
2EZ16
2EZ17
2EZ18
2EZ19
2EZ20
2EZ22
2EZ24
2EZ25
2EZ27
2EZ28
2EZ30
2EZ33
2EZ36
2EZ39
2EZ43
2EZ47
2EZ51
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
6.46
7.13
7.79
8.27
8.65
9.5
10.45
11.4
12.35
13.3
14.25
15.2
16.15
17.1
18.05
19
20.9
22.8
23.75
25.65
26.6
28.5
31.35
34.2
37.05
40.85
44.65
48.45
7.14
7.88
8.61
9.14
9.56
10.5
11.55
12.6
13.65
14.7
15.75
16.8
17.85
18.9
19.95
21
23.1
25.2
26.25
28.35
29.4
31.5
34.65
37.8
40.95
45.15
49.35
53.55
2
2
2
2
3
4
4
5
5
6
7
8
9
10
11
11
12
13
14
18
18
20
23
25
30
35
40
48
73.5
66.5
61
58
55
50
45.5
41.5
38.5
35.7
33.4
31.2
29.4
27.8
26.3
25
22.8
20.8
20
18.5
17
16.6
15.1
13.9
12.8
11.6
10.6
9.8
700
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
1
0.5
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
5
5
5
4
3
3
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
4
5
6
6.6
7
7.6
8.4
9.1
9.9
10.6
11.4
12.2
13
13.7
14.4
15.2
16.7
18.2
19
20.6
21.3
22.5
25.1
27.4
29.7
32.7
35.8
38.8
2EZ6.8
2EZ7.5
2EZ8.2
2EZ8.7
2EZ9.1
2EZ10
2EZ11
2EZ12
2EZ13
2EZ14
2EZ15
2EZ16
2EZ17
2EZ18
2EZ19
2EZ20
2EZ22
2EZ24
2EZ25
2EZ27
2EZ28
2EZ30
2EZ33
2EZ36
2EZ39
2EZ43
2EZ47
2EZ51
V
Z
@ I
ZT
Mi n. V
Max. V
Ma xi mum Ze ner Imp e da nce
Z
ZT
@ I
ZT
mA
Z
ZK
@ I
ZK
mA
uA
Leakage Current
I
R
@V
R
V
Marking Code
February 21,2014-REV.04
PAGE . 2
2EZ6.8~2EZ51
2.5
500
P
D
, Maximum Power Dissipation (W)
P
PK
, PEAK SURGE POWER (WATTS)
2
L=2mm
250
100
100
50
25
15
10
5
0.1 0.20.3 0.5
RECTAN GULAR
NON - REPETIT IVE
T
J
=25
O
C PRIOR
TOINTIA L PULSE
1.5
1
L
L
0.5
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
1
2 3
5
10 20 30 50
100
T
L
, Lead Temperature (
)
P.W.PULSE WIDTH(ms)
Fig.1 Power Temperature Derating Curve
FIGURE 2. MAXIMUM SURGE POWER
FIGURE 3. TYPICAL THERMAL RESPONSEL,
APPLICATION NOTE:
Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determinejunction
temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
q
L
A
P
D
+ T
A
O
q
L
A
is the lead-to-ambient thermal resistance ( C/W) and Pd is the power dissipation. The value for
q
L
A
will vary and depends
on the device mounting method.
q
L
A
is generally 30-40
O
C/W for the various clips and tie points in common use and for printed
circuit board wiring.
The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of
TL, the junction temperature may be determined by:
T
J
= T
L
+
D
T
JL
D
T
JL
is the increase in junction temperature above the lead temperature and may be found from Figure 3 for a train of power pulses
or from Figure 10 for dc power.
D
T
JL
=
q
J
L
P
D
For worst-case design, using expected limits of I
Z
, limits of P
D
and the extremes of T
J
(
D
T
J
) may be estimated. Changes in voltage,
V
Z
, can then be found from:
D
V =
q
V
Z
D
T
J
q
V
Z
, the zener voltage temperature coefficient, is found from Figures 5 and 6.
Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance.
For best regulation, keep current excursions as low as possible.
Data of Figure 3 should not be used to compute surge capa-bility. Surge limitations are given in Figure 2. They are lower than would
be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small
spots resulting in device degradation should the limits of Figure 2 be exceeded.
February 21,2014-REV.04
PAGE . 3
2EZ6.8~2EZ51
P
D
, Maximum Power Dissipation (W)
T
A
, Ambient temperature
(°C
)
FIGURE 8.TYPICAL THERMAL RESISTANCE
February 21,2014-REV.04
PAGE . 4
2EZ6.8~2EZ51
Part No_packing code_Version
2EZ6.8_AY_00001
2EZ6.8_AY_10001
2EZ6.8_B0_00001
2EZ6.8_B0_10001
2EZ6.8_R2_00001
2EZ6.8_R2_10001
For example :
RB500V-40_R2_00001
Part No.
Serial number
Version code means HF
Packing size code means 13"
Packing type means T/R
Packing Code
XX
Packing type
Tape and Ammunition Box
(T/B)
Tape and Reel
(T/R)
Bulk Packing
(B/P)
Tube Packing
(T/P)
Tape and Reel (Right Oriented)
(TRR)
Tape and Reel (Left Oriented)
(TRL)
FORMING
1
st
Code
A
R
B
T
S
L
F
Packing size code
N/A
7"
13"
26mm
52mm
PANASERT T/B CATHODE UP
(PBCU)
PANASERT T/B CATHODE DOWN
(PBCD)
Version Code
XXXXX
2
nd
Code
HF or RoHS
1
st
Code 2
nd
~5
th
Code
0
1
2
X
Y
U
D
HF
RoHS
0
1
serial number
serial number
February 21,2014-REV.04
PAGE . 5
鉴于目前中国Linux的发展现状,90%以上的问题都可以用一句话来回答.
0001 修改主机名(陈绪) vi /etc/sysconfig/network,修改HOSTNAME一行为"HOSTNAME=主机名"(没有这行?那就添加这一行吧),然后运行命令" hostname 主机名"。一般还要修改/etc/hosts文 ......
黑衣人 Linux与安卓
【晒心得】STM32F03开发板--系统时钟设置SysTick
【晒心得】STM32F03开发板--系统时钟设置首先我先分析下startup_stm32f0xx.s启动代码,其中/* Call the clock system intitialization function.*/ bl SystemInit/* Call the application's e ......
qinkaiabc stm32/stm8
奇怪的问题,外部ram的读写总是不对
使用ADUC7026的芯片,采样AD的数据再写到外部RAM,发现写的数据总是不对,不知道什么原因 单步执行是正确的,但是全速运行就不对了,RAM的读写延迟都设过,没用...
PWP1013 嵌入式系统
BUCK电路如何控制输出恒压
BUCK输出电压理论波形是方波,怎样才能使输出电压恒定呢,加大电容可行不?...
喜鹊王子 模拟与混合信号
资料分享: 软交换在3G核心网中的应用
一、概述   下一代网络是集话音、数据和多媒体业务于一体的全新网络。它基于软交换技术和IP技术构建出分层开放的体系架构。 运营商可以在业务的驱动下利用这个开放的体系架构灵活实现自己的 ......
1234 RF/无线
STM32上应用MQ2
void Mq2_Init(void) { GPIO_InitTypeDef GPIO_InitStruct; EXTI_InitTypeDef EXTI_InitStruct; NVIC_InitTypeDef NVIC_InitStruct; RCC_APB2PeriphClockCmd(RCC ......
夜的第柒章 stm32/stm8
小广播

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区知春路23号集成电路设计园量子银座1305 电话:(010)82350740 邮编:100191

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2022 EEWORLD.com.cn, Inc. All rights reserved