电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索
 

25N10L-TN3-R

器件型号:25N10L-TN3-R
器件类别:分立半导体    MOS(场效应管)   
厂商:友顺(UTC)
友順科技股份有限公司成立於1990年,專注致力於類比IC及離散式元件Discrete研發、設計、製造、封裝、測試及行銷業務。
厂商官网:http://www.utc-ic.com/
下载文档

器件描述

漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):23A(Tc) 栅源极阈值电压:4V @ 250uA 漏源导通电阻:80mΩ @ 16A,10V 最大功率耗散(Ta=25°C):41W(Tc) 类型:N沟道

参数
属性参数值
漏源电压(Vdss)100V
连续漏极电流(Id)(25°C 时)23A(Tc)
栅源极阈值电压4V @ 250uA
漏源导通电阻80mΩ @ 16A,10V
最大功率耗散(Ta=25°C)41W(Tc)
类型N沟道

25N10L-TN3-R产品介绍

UNISONIC TECHNOLOGIES CO., LTD
25N10
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
25N10
is an N-channel enhancement mode power
MOSFET and it uses UTC’s perfect technology to provide designers
with fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
It is generally suitable for all commercial-industrial applications
and DC/DC converters requiring low voltage.
FEATURES
* Single Drive Requirement
* Low Gate Charge
* RoHS Compliant
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
25N10L-TF1-T
25N10G-TF1-T
25N10L-TF2-T
25N10G-TF2-T
25N10L-TF3-T
25N10G-TF3-T
25N10L-TM3-T
25N10G-TM3-T
25N10L-TN3-R
25N10G-TN3-R
Package
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-448.C
25N10
MARKING INFORMATION
PACKAGE
TO-220F1
TO-220F2
TO-220
TO-251
TO-252
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-448.C
25N10
ABSOLUTE MAXIMUM RATINGS
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain Source Voltage
V
DSS
100
V
Gate Source Voltage
V
GSS
±20
V
I
D
23
A
T
C
=25°C
Continuous Drain Current
(V
GS
=10V)
T
C
= 100°C
I
D
14.6
A
Pulsed Drain Current (Note 2)
I
DM
80
A
TO-220F/TO-220F1
50
Total Power Dissipation
P
D
TO-220F2
52
W
(T
C
=25°C)
TO-251/TO-252
41
Operating Junction Temperature
T
J
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by max. junction temperature
THERMAL DATA
SYMBOL
θ
JA
RATINGS
62.5
100
2.5
2.4
3
UNIT
°C/W
PARAMETER
TO-220F/TO-220F1
TO-220F2
Junction to Ambient
TO-251/TO-252
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251/TO-252
θ
JC
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-448.C
25N10
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
V
GS
=0V, I
D
=1mA
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Power MOSFET
MIN
100
TYP MAX UNIT
V
0.14
25
100
±100
V/°C
µA
µA
nA
V
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
nC
∆BV
DSS
/∆T
J
Reference to 25°C , I
D
=1mA
I
DSS
V
DS
=100V, V
GS
=0V, T
J
=25°C
V
DS
=80V, V
GS
=0V,T
J
=150°C
V
GS
=±20V
2
Gate-Source Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-Resistance (Note)
R
DS(ON)
V
GS
=10V, I
D
=16A
Forward Transconductance
g
FS
V
DS
=10V, I
D
=16A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
Gate Resistance
R
G
f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note)
Q
G
V
GS
=10V, V
DS
=80V, I
D
=16A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
1
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=50V, I
D
=16A, R
G
=3.3Ω,
V
GS
=10V, R
D
=3.125Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
V
SD
I
S
=16A, V
GS
=0V
Reverse Recovery Time
t
RR
I
S
=16A,V
GS
=0V,
dI/dt=100A/µs
Reverse Recovery Charge
Q
RR
Note: Pulse Test : Pulse width
300μs, Duty cycle
2%.
4
80
14
1060 1700
270
8
1.5
2.3
19
5
6
10
28
17
2
30
1.3
90
380
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-448.C
25N10
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current, I
D
(µA)
Drain Current, I
D
(A)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Current, I
D
(A)
Drain Current, I
D
(µA)
5 of 5
QW-R502-448.C
小广播

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区知春路23号集成电路设计园量子银座1305 电话:(010)82350740 邮编:100191

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2021 EEWORLD.com.cn, Inc. All rights reserved