CAB450M12XM3
Technical Features
•
•
•
•
V
DS
I
DS
5
4
1200 V
450 A
3
2
1200V, 450A All-Silicon Carbide
Conduction Optimized, Half-Bridge Module
Package 80 x 53 x 19 mm
D
V+
V+
High Power Density Footprint
High Junction Temperature (175 °C) Operation
Low Inductance (6.7 nH) Design
Implements Conduction Optimized Third
Generation SiC MOSFET Technology
• Silicon Nitride Insulator and Copper Baseplate
G1
C
K1
Mid
NTC2
G2
K2
NTC1
V-
NTC
Applications
•
•
•
•
Motor & Traction Drives
Vehicle Fast Chargers
Uninterruptable Power Supplies
Smart-Grid / Grid-Tied Distributed Generation
B
System Benefits
• Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple,
low inductance design.
• Isolated integrated temperature sensing enables high-level temperature protection.
• Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent
Title
protection.
A
<Title>
Size
Document Number
Custom<Doc>
Key Parameters
(T
C
= 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Date:
5
4
Thursday, April 11, 2019
3
Sheet
2
Unit
Test Conditions
Note
V
DS max
V
GS max
V
GS op
I
DS
I
SD
I
SD BD
Drain-Source Voltage
Gate-Source Voltage, Maximum Value
Gate-Source Voltage, Recommended
Op. Value
DC Continuous Drain Current
DC Source-Drain Current
DC Source-Drain Current (Body Diode)
225
-4
-4
1200
+19
+15
450
409
450
900
900
-40
175
°C
A
V
AC frequency ≥ 1Hz.
Static
V
GS
= 15 V, T
C
= 25 ˚C, T
VJ
≤ 175 ˚C Fig. 20
V
GS
= 15 V, T
C
= 90 ˚C, T
VJ
≤ 175 ˚C
Note 2
V
GS
= 15 V, T
C
= 25 ˚C, T
VJ
≤ 175 ˚C
V
GS
= - 4 V, T
C
= 25 ˚C, T
VJ
≤ 175 ˚C
t
Pmax
limited by T
jmax
V
GS
= 15 V, T
C
= 25 ˚C
Note 1
I
DS (pulsed)
Maximum Pulsed Drain-Source Current
I
SD (pulsed)
Maximum Pulsed Source-Drain Current
T
VJ op
Note 1
Note 2
Maximum Virtual Junction
Temperature under Switching
Conditions
If MOSFET body diode is not used, V
GS max
= -8/+19 V
Assumes R
TH JC
= 0.11°C/W and R
DS(on)
= 4.6 mΩ. Calculate P
D
= (T
VJ
– T
C
) / R
TH JC
. Calculate I
D_MAX
= √(P
D
/ R
DS(on)
)
1
Rev. A, 2019-06-01
CAB450M12XM3
4600 Silicon Dr., Durham, NC 27703
Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
MOSFET Characteristics (Per Position)
(T
C
= 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance (Devices
Only)
Transconductance
Turn-On Switching Energy, T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
Turn-Off Switching Energy, T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
Internal Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
FET Thermal Resistance, Junction to Case
1200
1.8
2.5
2.0
5
0.05
2.6
4.6
355
360
11.0
11.7
13.0
10.1
11.3
12.1
2.5
38.0
1.5
90
355
500
1330
0.11
0.13
°C/W
nC
200
1.3
3.7
3.6
V
μ
A
V
GS
= 0 V, I
D
= 200
μ
A
Test Conditions
Note
V
DS
= V
GS
, I
D
= 132 mA
V
DS
= V
GS
, I
D
= 132 mA, T
J
= 175 °C
V
GS
= 0 V, V
DS
= 1200 V
V
GS
= 15 V, V
DS
= 0 V
V
GS
= 15 V, I
D
= 450 A
V
GS
= 15 V, I
D
= 450 A, T
J
= 175 °C
V
DS
= 20 V, I
DS
= 450 A
V
DS
= 20 V, I
DS
= 450 A, T
J
= 175 °C
V
DS
= 600 V,
I
D
= 450A,
V
GS
= -4 V/15 V,
R
G(ext)
= 0.0 Ω,
L= 13.6
μ
H
Fig. 2
Fig. 3
Fig. 4
mΩ
g
fs
S
E
On
mJ
Fig. 11
Fig. 13
E
Off
R
G(int)
C
iss
C
oss
C
rss
Q
GS
Q
GD
Q
G
R
th JC
Ω
nF
pF
V
GS
= 0 V, V
DS
= 800 V,
V
AC
= 25 mV, f = 100 kHz
V
DS
= 800 V, V
GS
= -4 V/15 V
I
D
= 450 A
Per IEC60747-8-4 pg 21
Fig. 9
Fig. 17
Body Diode Characteristics (Per Position)
(T
C
= 25˚C unless otherwise specified)
Symbol Parameter
Min.
Typ.
Max.
Unit
Test Conditions
Note
V
SD
t
rr
Q
rr
I
rr
E
rr
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recovery Energy T
J
= 25 °C
T
J
= 125 °C
T
J
= 175 °C
4.7
4.2
52
6.6
195
0.2
1.1
1.9
V
μ
C
V
GS
= -4 V, I
SD
= 450 A
V
GS
= -4 V, I
SD
= 450 A, T
J
= 175 °C
V
GS
= -4 V, I
SD
= 450 A, V
R
= 600 V
di/dt = 8 A/ns, T
J
= 175 °C
V
DS
= 600 V, I
D
= 450A,
V
GS
= -4 V/15 V, R
G(ext)
= 0.0 Ω,
L= 13.6
μ
H
Fig. 7
ns
A
mJ
Fig. 14
2
Rev. A, 2019-06-01
CAB450M12XM3
4600 Silicon Dr., Durham, NC 27703
Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
Temperature Sensor (NTC) Characteristics
Symbol Parameter
Min.
Typ.
Max.
Unit
Test Conditions
R
25
∆R/R
P
25
Rated Resistance
Tolerance of R
25
Maximum Power Dissipation
4.7
±1
50
kΩ
%
mW
T
NTC
= 25 °C
Steinhart-Hart Modified Coefficients for R/T Computation:
A
T
NTC
< 25 °C
T
NTC
≥ 25 °C
3.3540E-03
3.3540E-03
B
3.0013E-04
3.0013E-04
C
5.0852E-06
5.0852E-06
D
2.1877E-07
2.1877E-07
Module Physical Characteristics
Symbol Parameter
Min.
Typ.
Max.
Unit
Test Conditions
R
3-1
R
1-2
L
Stray
T
C
W
M
S
V
isol
CTI
Package Resistance, M1
Package Resistance, M2
Stray Inductance
Case Temperature
Weight
Mounting Torque
Case Isolation Voltage
Comparative Tracking Index
2.0
2.0
4.0
600
12.5
Clearance Distance
11.5
5.7
13.7
14.7
Creepage Distance
14.0
14.7
14.3
-40
0.72
0.63
6.7
125
175
3.0
4.0
4.0
5.0
mΩ
nH
°C
g
N-m
kV
T
C
= 125 °C, Note
1
3
T
C
= 125 °C, Note 3
Between Terminals 2 and 3
Baseplate, M4 bolts
Power Terminals, M5 bolts
AC, 50 Hz, 1 min
From 2 to 3, Note
2
4
From 1 to Baseplate, Note 4
From 2 to 5, Note 4
From 5 to Baseplate, Note 4
From 2 to 3, Note 4
From 1 to Baseplate, Note 4
From 2 to 5, Note 4
From 5 to Baseplate, Note 4
mm
Note
1
3
Note
2
4
Total Effective Resistance (Per Switch Position) = MOSFET R
DS(on)
+ Switch Position Package Resistance.
Numbers reference the connections from the Schematic and Package Dimensions sections of this document.
3
Rev. A, 2019-06-01
CAB450M12XM3
4600 Silicon Dr., Durham, NC 27703
Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
Typical Performance
900
800
Conditions:
tp < 300
μs
V
GS
= 15 V
25 °C
-40 °C
2.0
Normalized On-resistance (p.u.)
Drain-Source Current, I
DS
(A)
700
600
500
400
300
200
100
0
0.0
1.8
1.6
1.4
1.2
1.0
0.8
Conditions:
tp < 300
μs
V
GS
= 15 V
175 °C
150 °C
125 °C
100 °C
-40 °C
25 °C
100 °C
125 °C
150 °C
175 °C
1.0
2.0
3.0
4.0
5.0
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics for Various Junction
Temperatures
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
0
50
100
150
200
Conditions:
tp < 300
μs
V
GS
= 15 V
I
D
= 450 A
0
100
200
300
400
500
600
700
800
900
Drain-Source Current, I
DS
(A)
Figure 2. Normalized On-State Resistance vs. Drain Current for Various
Juction Temperatures
700
Conditions:
tp < 300
μs
V
DS
= 20 V
175 °C
150 °C
125 °C
100 °C
Normalized On-resistance (p.u.)
Drain-Source Current, I
DS
(A)
600
500
400
300
200
100
0
25 °C
0 °C
-25 °C
-40 °C
Virtual Junction Temperature, T
VJ
(°C)
0.0
2.0
4.0
6.0
8.0
10.0
Gate-Source Voltage, V
GS
(V)
Figure 4. Transfer Characteristic for Various Junction
Temperatures
900
800
Conditions:
tp < 300
μs
V
GS
= 0.0 V
Figure 3. Normalized On-State Resistance vs.
Juction Temperature
900
800
Conditions:
tp < 300
μs
V
GS
= 15 V
Source-Drain Current, I
SD
(A)
700
600
500
400
300
200
100
0
Source-Drain Current, I
SD
(A)
700
600
500
400
300
200
100
175 °C
150 °C
125 °C
100 °C
25 °C
-40 °C
100 °C
125 °C
150 °C
175 °C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
25 °C
0 °C
-25 °C
-40 °C
0
Source-Drain Voltage, V
SD
(V)
Figure 5. 3
rd
Quadrant Characteristic vs. Junction Temperatures at V
GS
= 15
V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Source-Drain Voltage, V
SD
(V)
Figure 6. 3
rd
Quadrant Characteristic vs. Junction Temperatures at V
GS
= 0
V (Body Diode)
4
Rev. A, 2019-06-01
CAB450M12XM3
4600 Silicon Dr., Durham, NC 27703
Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
Typical Performance
900
800
Conditions:
tp < 300
μs
V
GS
= - 4.0 V
1,000.00
T
J
= 25 °C
V
AC
= 25 mV
f = 100 kHz
C
iss
Source-Drain Current, I
SD
(A)
700
600
500
400
300
200
100
0
100.00
175 °C
150 °C
125 °C
100 °C
Capacitance (nF)
10.00
C
oss
1.00
25 °C
0 °C
-25 °C
-40 °C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.10
C
rss
0.01
Source-Drain Voltage, V
SD
(V)
Figure 7. 3
rd
Quadrant Characteristic vs. Junction Temperatures at
V
GS
= - 4 V (Body Diode)
1,000.00
T
J
= 25 °C
V
AC
= 25 mV
f = 100 kHz
4.0
3.5
0
50
100
150
200
Drain-Source Voltage, V
DS
(V)
Figure 8. Typical Capacitances vs. Drain to Source Voltage
(0 - 200V)
Conditions:
V
GS
= V
DS
I
DS
= 132 mA
Thresold Voltage, V
th
(V)
100.00
C
iss
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
Capacitance (nF)
10.00
C
oss
1.00
0.10
C
rss
0.01
0
200
400
600
800
1,000
1,200
150
200
Drain-Source Voltage, V
DS
(V)
Figure 9. Typical Capacitances vs. Drain to Source Voltage
(0 - 1200V)
60
50
Conditions:
T
VJ
= 25 °C
V
DS
= 600 V
R
G(ext)
= 0.0
Ω
V
GS
= -4/+15 V
L = 13.6 µH
E
On +
E
Off
80
70
Conditions:
T
VJ
= 25 °C
V
DS
= 800 V
R
G(ext)
= 0.0
Ω
V
GS
= -4/+15 V
L = 13.6 µH
Junction Temperature, T
J
(°C)
Figure 10. Threshold Voltage vs. Junction Temperature
E
On +
E
Off
Switching Energy (mJ)
40
30
20
10
Switching Energy (mJ)
60
50
40
30
20
10
0
0
E
Off
E
On
E
Off
E
On
E
RR
0
0
200
400
600
800
1000
E
RR
200
400
600
800
1000
Drain-Source Current, I
DS
(A)
Figure 11. Switching Energy vs. Drain Current
(V
DS
= 600 V)
Drain-Source Current, I
DS
(A)
Figure 12. Switching Energy vs. Drain Current
(V
DS
= 800 V)
5
Rev. A, 2019-06-01
CAB450M12XM3
4600 Silicon Dr., Durham, NC 27703
Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
京公网安备 11010802033920号
Copyright © 2005-2023 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
