C6D08065A
®
Silicon Carbide Schottky Diode
V
RRM
Q
c
=
650 V
8A
29 nC
Z-Rec
Rectifier
Features
I
F
(T
C
=155˚C)
=
=
Package
•
•
•
•
•
•
•
New 6
th
Generation Technology
Low Forward Voltage Drop (V
F
)
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
Low Leakage Current (I
r
)
Temperature-Independent Switching Behavior
Positive Temperature Coefficient on V
F
TO-220-2
Benefits
•
•
•
•
Higher System Level Efficiency
Increase System Power Density
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
PIN 1
PIN 2
CASE
Applications
Part Number
C6D08065A
Package
TO-220-2
Marking
C6D08065
•
•
•
•
•
Switch Mode Power Supplies (SMPS)
Server/Telecom Power Supplies
Industrial Power Supplies
Solar
UPS
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
V
RRM
V
DC
I
F
I
FRM
I
FSM
I
F,Max
P
tot
T
J
, T
stg
Parameter
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
Value
650
650
30
16
8
37
22
69
63
860
790
92.6
40.1
-55 to
+175
1
8.8
Unit
V
V
A
A
A
A
W
˚C
Nm
lbf-in
M3 Screw
6-32 Screw
T
C
=25˚C
T
C
=125˚C
T
C
=155˚C
Test Conditions
Note
Fig. 3
T
C
=25˚C, t
P
= 10 ms, Half Sine Wave
T
C
=110˚C, t
P
=10 ms, Half Sine Wave
T
C
=25˚C, t
p
= 10 ms, Half Sine Wave
T
C
=110˚C, t
p
= 10 ms, Half Sine Wave
T
C
=25˚C, t
P
= 10 µs, Pulse
T
C
=110˚C, t
P
= 10 µs, Pulse
T
C
=25˚C
T
C
=110˚C
Fig. 8
Fig. 8
Fig. 4
1
C6D08065A, Rev. -, 04-2019
Electrical Characteristics
Symbol
V
F
I
R
Q
C
C
E
C
Parameter
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Capacitance Stored Energy
Typ.
1.27
1.37
2
15
29
518
57
45
4.4
Max.
1.50
1.60
40
160
Unit
V
μA
nC
pF
μJ
Test Conditions
I
F
= 8 A T
J
=25°C
I
F
= 8 A T
J
=175°C
V
R
= 650 V T
J
=25°C
V
R
= 650 V T
J
=175°C
V
R
= 400 V, I
F
= 8A
T
J
= 25°C
V
R
= 0 V, T
J
= 25°C, f = 1 MHz
V
R
= 200 V, T
J
= 25˚C, f = 1 MHz
V
R
= 400 V, T
J
= 25˚C, f = 1 MHz
V
R
= 400 V
Note
Fig. 1
Fig. 2
Fig. 5
Fig. 6
Fig. 7
Note: This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol
R
θJC
Parameter
Thermal Resistance from Junction to Case
Typ.
1.62
Unit
°C/W
Note
Fig. 9
Typical Performance
20
18
16
Foward Current, I
F
(A)
(A)
II (A)
I (A)
100
T
J
= -55°C
T
J
= 25°C
T
J
= 75°C
T
J
= 125°C
T
J
= 175°C
14
12
10
8
6
4
2
0
0.5
Reverse Leakage Current, I
RR
(uA)
I (
m
A)
80
I
R
I
R
(
m
A)
R
(
m
A)
60
T
J
= 175 °C
T
J
= 125 °C
FF
F
40
T
J
= 75 °C
T
J
= 25 °C
T
J
= -55 °C
20
1.0
Foward Voltage, V
F
(V)
V
F
(V)
VV
F
(V)
(V)
F
1.5
2.0
2.5
0
0
100
200
V
R
Voltage,
V
R R
(V)
(V)
Reverse
V(V)
V
R
(V)
300
400
500
600
700
800
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2
C6D08065A, Rev. -, 04-2019
Typical Performance
100
90
80
70
I
F(peak)
(A)
II
F(peak)
(A)
I
F
(A)
F(peak)
(A)
F(peak)
10% Duty
20% Duty
30% Duty
50% Duty
70% Duty
DC
100
14
90
90
80
80
70
12
50
40
30
20
10
0
25
50
75
100
125
150
175
P
Tot
(W)
P
TOT
(W)
P
Tot
(W)
P
TOT
(W)
Tot
Tot
60
10
70
60
60
8
50
50
40
6
40
30
30
4
20
20
10
10
2
0
T
C
˚C
T
CC
(°C)
T ˚C
T
C
˚C
25
50
75
75
T
C
˚C
T
C
(°C)
T
C
˚C
T
C
˚C
100
100
125
125
150
150
175
175
Figure 3. Current Derating
Figure 4. Power Derating
12
45
Capacitive
Q (nC)
Q
C
(nC)
Charge,
Q (nC)
C (pF)
40
10
35
8
30
Conditions:
T
J
= 25 °C
180
600
160
500
140
Capacitance (pF)
Capacitance
CC (pF)
(pF)
Conditions:
T
J
= 25 °C
F
test
= 1 MHz
V
test
= 25 mV
400
120
25
6
20
4
15
100
300
80
200
60
C
C
C
10
2
5
0
0
100
200
300
400
500
500
600
600
700
700
40
100
20
0
(V)
V
Voltage,
R
Reverse
V
R
(V)
V
R
(V)
R
R
0
0
1
1
(V)
Reverse
V
R
(V)
V
R
(V)
R
V
R
Voltage,
R
10
10
100
100
1000
1000
Figure 5. Total Capacitance Charge vs. Reverse Voltage
Figure 6. Capacitance vs. Reverse Voltage
3
C6D08065A, Rev. -, 04-2019
Typical Performance
12
10
Capacitance Stored Energy, E
C
(mJ)
E (
m
J)
1,000
12
10
I
FSM
(A)
Capacitance Stored Energy, E
C
(mJ)
I
(A)
T
J_initial
= 25 °C
T
J_initial
= 110 °C
8
E
C
(
m
J)
8
4
2
0
FSM
6
100
6
4
2
0
10
10E-6
100
0
C
0
100
200
Reverse Voltage, V
R
(V)
V
R
(V)
300
400
500
600
700
100E-6
200
300
Reverse
p
(s)
(s)
V
R
(V)
t
Voltage,
Time, t
p
400
1E-3
500
600
10E-3
700
Figure 7. Capacitance Stored Energy
Figure 8. Non-repetitive peak forward surge current
versus pulse duration (sinusoidal waveform)
o
Junction To Case Impedance, Z
thJC
(
(
o
C/W)
Junction To
Resistance (˚C/W)
C/W)
Thermal Resistance (˚C/W)
Thermal Resistance (˚C/W)
Thermal
Case Impedance, Z
thJC
1
10
1
0.5
0.5
0.3
0.3
0.5
0.1
0.3
0.1
0.05
0.05
100E-3
100E-3
1
0.02
0.02
0.01
0.05
0.02
0.1
0.01
SinglePulse
SinglePulse
SinglePulse
10E-3
10E-3
100E-3
0.01
1E-3
1E-3
10E-3
1E-6
1E-6
1E-6
10E-6
10E-6
10E-6
100E-6
100E-6
1E-3
Time, t
p
(s)
T (Sec)
T (Sec)
T (Sec)
T (Sec)
1E-3
10E-3 100E-3
10E-3
1
100E-3
10
100
1
Figure 9. Transient Thermal Impedance
4
C6D08065A, Rev. -, 04-2019
Package Dimensions
Package TO-220-2
POS
A
B
C
D
D1
D2
D3
E
E1
E2
F
G
H
L
M
N
P
Q
S
T
U
V
W
Min
.381
.235
.100
.223
.457-.490
.277-.303 typ
.244-.252 typ
.590
.302
.227
.143
1.105
.500
.025
.045
.195
.165
.048
3°
3°
3°
.094
.014
3°
.385
.130
.615
.326
251
.153
1.147
.550
.036
.055
.205
.185
.054
6°
6°
6°
.110
.025
5.5°
.410
.150
Inches
Max
.410
.255
.120
.337
Millimeters
Min
9.677
5.969
2.540
5.664
Max
10.414
6.477
3.048
8.560
11.60-12.45 typ
7.04-7.70 typ
6.22-6.4 typ
14.986
7.68
5.77
3.632
28.067
12.700
.635
1.143
4.953
4.191
1.219
3°
3°
3°
2.388
.356
3°
9.779
3.302
15.621
8.28
6.37
3.886
29.134
13.970
.914
1.550
5.207
4.699
1.372
6°
6°
6°
2.794
.635
5.5°
10.414
3.810
PIN 1
PIN 2
CASE
X
Y
z
NOTE:
1. Dimension L, M, W apply for Solder Dip Finish
Recommended Solder Pad Layout
TO-220-2
Part Number
C6D08065A
Package
TO-220-2
Marking
C6D08065
Note: Recommended soldering profiles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
5
C6D08065A, Rev. -, 04-2019
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