BTA16-800B
4Q Triac
Rev.01 - 14 June 2018
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT78D (IITO-220) internally insulated plastic package
intended for use in general purpose bidirectional switching and phase control applications.
2. Features and benefits
•
•
•
•
•
•
•
•
High voltage capability
Least sensitive gate for highest noise immunity
High junction operating temperature capability (T
j(max)
= 150 °C)
High minimum I
GT
for guaranteed immunity to gate noise
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
Internally insulated package
Isolated mounting base with 2500 V (RMS) isolation
3. Applications
•
•
•
•
Applications subject to high temperature (T
j(max)
= 150 °C)
Compressor starting control circuits
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
junction temperature
full sine wave; T
mb
≤ 112 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; t
p
= 20 ms; T
j(init)
= 25 °C;
Fig. 4; Fig. 5
full sine wave; t
p
= 16.7 ms; T
j(init)
= 25 °C
T
j
Conditions
Values
800
16
160
176
150
Unit
V
A
A
A
°C
Absolute maximum rating
WeEn Semiconductors
BTA16-800B
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+
T
j
= 25 °C;
Fig. 7
Min
10
10
10
10
-
-
500
Typ
-
-
-
-
-
1.22
-
Max
50
50
50
70
60
1.5
-
Unit
mA
mA
mA
mA
mA
V
V/μs
4Q Triac
Symbol
I
GT
Parameter
gate trigger current
Static characteristics
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 20 A; T
j
= 25 °C;
Fig. 10
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
Dynamic characteristics
400
-
-
V/μs
dI
com
/dt
rate of change of
commutating current
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 16 A;
dV
com
/dt = 20 V/μs; gate open circuit;
snubberless condition
2
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
mb
T1
T2
G
n.c
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
Graphic symbol
T2
sym051
T1
G
IITO-220 (SOT78D)
1
2
3
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA16-800B
IITO-220
Description
Plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3 leads TO-220
Version
IITO-220E
7. Marking
Table 4. Marking codes
Type number
BTA16-800B
BTA16-800B
Marking codes
BTA16-800B
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
14 June 2018
2 / 12
WeEn Semiconductors
BTA16-800B
4Q Triac
8. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I
2
t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
full sine wave; T
mb
≤ 112°C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; t
p
= 20 ms; T
j(init)
= 25 °C;
Fig. 4; Fig. 5
full sine wave; t
p
= 16.7 ms; T
j(init)
= 25 °C
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
t
p
= 10ms; sine wave
I
G
= 150mA
Conditions
Values
800
16
160
176
128
50
2
5
0.5
-40 to 150
150
Unit
V
A
A
A
A
2
s
A/μs
A
W
W
°C
°C
I
T(RMS)
(A)
20
bide17-001
I
T(RMS)
(A)
112 °C
44
bide17-002
16
36
12
28
8
20
4
0
-50
0
50
100
150
T
mb
(°C)
12
10
-2
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
= 112 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA16-800B
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
14 June 2018
3 / 12
WeEn Semiconductors
BTA16-800B
bide17-003
4Q Triac
P
tot
(W)
24
20
16
12
8
4
0
conduction form
angle
factor
(degrees)
α
30
60
90
120
180
2.816
1.976
1.570
1.329
1.110
α
α = 180°
120 °
90°
60°
30°
104.4
T
mb(max)
(°C)
112
119.6
127.2
134.8
142.4
150
20
0
4
8
12
16
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
200
I
T
I
T(RMS)
(A)
bide17-004
I
TSM
t
160
T
T
j(init)
= 25 °C max
120
80
40
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
I
TSM
(A)
10
4
I
T
bide17-005
I
TSM
t
10
3
T
T
j(init)
= 25 °C max
(1)
10
2
10
10
-5
10
-4
10
-3
10
-2
t
p
≤ 20 ms ;
(1) dI
T
/dt limit
Fig. 5. Total power dissipation as a function of RMS on-state current; maximum values
BTA16-800B
All information provided in this document is subject to legal disclaimers.
©
t
p
(s)
10
-1
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
14 June 2018
4 / 12
WeEn Semiconductors
BTA16-800B
4Q Triac
9. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
Conditions
Fig. 6
Min
-
Typ
-
Max
1.9
Unit
K/W
R
th(j-a)
in free air
-
60
-
K/W
Z
th(j-mb)
(K/W)
10
bide17-006
1
10
-1
P
10
-2
t
p
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
T
δ=
t
T
t
p
(s)
1
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Isolation characteristics
Table 6. Isolation characteristics
Symbol
V
isol(RMS)
Parameter
RMS isolation voltage
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
from cathode to external heatsink
Min
-
Typ
-
Max
2500
Unit
V
C
isol
isolation capacitance
-
10
-
PF
BTA16-800B
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
14 June 2018
5 / 12
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