STW70N65DM6-4
Datasheet
N-channel 650 V, 36 mΩ typ., 68 A MDmesh DM6 Power MOSFET
in a TO247‑4 package
Features
Order code
STW70N65DM6-4
V
DS
650 V
R
DS(on)
max.
40 mΩ
I
D
68 A
1
TO247-4
Drain(1, TAB)
2
4
3
•
•
•
•
•
•
•
Fast-recovery body diode
Lower R
DS(on)
per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Excellent switching performance thanks to the extra driving source pin
Gate(4)
Applications
•
Switching applications
Driver
source (3)
Power
source (2)
Description
AM10177v2Z
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Q
rr
), recovery time (t
rr
) and excellent
improvement in R
DS(on)
per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STW70N65DM6-4
Product summary
Order code
Marking
Package
Packing
STW70N65DM6-4
70N65DM6
TO247-4
Tube
DS13144
-
Rev 2
-
June 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
STW70N65DM6-4
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
V
GS
I
D
I
D
I
DM
(1)
P
TOT
dv/dt
(2)
di/dt
(2)
dv/dt
(3)
T
STG
T
J
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total power dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
Peak diode recovery current slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
Parameter
Value
±25
68
43
260
450
100
1000
100
-55 to 150
Unit
V
A
A
A
W
V/ns
A/μs
V/ns
°C
°C
1. Pulse width limited by safe operating area.
2. I
SD
≤ 68 A, V
DS (peak)
< V
(BR)DSS
, V
DD
= 400 V.
3. V
DS
≤ 520 V.
Table 2.
Thermal data
Symbol
R
thj-case
R
thj-amb
Thermal resistance junction-case
Thermal resistance junction-ambient
Parameter
Value
0.28
50
Unit
°C/W
°C/W
Table 3.
Avalanche characteristics
Symbol
I
AR
E
AS
Parameter
Avalanche current, repetitive or not repetitive (t
p
limited by T
J
max)
Single pulse avalanche energy (starting T
J
= 25 °C, I
D
= I
AR
; V
DD
= 50 V)
Value
8
1.8
Unit
A
J
DS13144
-
Rev 2
page 2/12
STW70N65DM6-4
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 4.
On/off states
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage
Static drain-source on resistance
Test conditions
V
GS
= 0 V, I
D
= 1 mA
V
GS
= 0 V, V
DS
= 650 V
V
GS
= 0 V, V
DS
= 650 V, T
C
= 125 °C
(1)
V
DS
= 0 V, V
GS
= ±25 V
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 34 A
3.25
4
36
Min.
650
10
100
±5
4.75
40
μA
μA
V
mΩ
Typ.
Max.
Unit
V
1. Defined by design, not subject to production test.
Table 5.
Dynamic characteristics
Symbol
C
iss
C
oss
C
rss
C
oss eq
.
(1)
R
G
Q
g
Q
gs
Q
gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
V
DS
= 0 to 520 V, V
GS
= 0 V
f = 1 MHz, I
D
= 0 A
V
DD
= 520 V, I
D
= 68 A, V
GS
= 0 to 10 V
(see
Figure 14. Test circuit for gate
charge behavior)
V
DS
= 100 V, f = 1 MHz, V
GS
= 0 V
Test conditions
Min.
-
-
-
-
-
-
-
-
Typ.
4900
280
3
859
2.3
125
33
56
Max.
-
-
-
-
-
-
-
-
nC
Ω
pF
Unit
1. C
oss eq
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0
to 80% V
DSS
.
Table 6.
Switching times
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 325 V, I
D
= 34 A,
R
G
= 4.7 Ω , V
GS
= 10 V
(see
Figure 13. Switching times test
circuit for resistive load
and
Figure 18. Switching time waveform)
Min.
-
-
-
-
Typ.
TBD
TBD
TBD
TBD
Max.
-
-
-
-
Unit
ns
ns
ns
ns
DS13144
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Rev 2
page 3/12
STW70N65DM6-4
Electrical characteristics
Table 7.
Source-drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V
GS
= 0 V, I
SD
= 68 A
I
SD
= 68 A, di/dt = 100 A/μs, V
DD
= 60 V
(see
Figure 15. Test circuit for inductive
load switching and diode recovery times)
I
SD
= 68 A, di/dt = 100 A/μs,
V
DD
= 60 V, T
J
= 150 °C
(see
Figure 15. Test circuit for inductive
load switching and diode recovery times)
Test conditions
Min.
-
-
-
-
-
-
-
-
-
17
1.08
12.7
308
4.16
27
Typ.
Max.
68
260
1.6
Unit
A
A
V
ns
µC
A
ns
µC
A
1. Pulse width is limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
DS13144
-
Rev 2
page 4/12
STW70N65DM6-4
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
I
D
(A)
GADG280620190757SOA
Figure 2.
Maximum transient thermal impedance
Z
thj-c
(°C/W)
t
p
= 1 µs
t
p
= 10 µs
GADG280620190822ZTH
I
DM
Operation in this area
is limited by R
DS(on)
0.2
10
-1
0.3
0.4
duty = 0.5
10
2
10
1
V
(BR)DSS
0.1
R
DS(on)
max.
t
p
= 100 µs
10
-2
0.05
single pulse
10
0
T
C
= 25 °C, T
J
≤ 150 °C
single pulse
10
-1
10
-1
10
0
10
1
10
2
t
p
= 1 ms
V
DS
(V)
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
Figure 3.
Typical output characteristics
I
D
(A)
240
200
160
120
80
40
0
0
2
4
6
8
V
GS
= 6 V
V
GS
= 7 V
GADG060620191330OCH
Figure 4.
Typical transfer characteristics
I
D
(A)
240
200
160
120
80
40
V
DS
= 12 V
GADG060620191331TCH
V
GS
= 9, 10 V
V
GS
= 8 V
10
12
V
DS
(V)
0
4
5
6
7
8
9
V
GS
(V)
Figure 5.
Typical gate charge characteristics
V
DS
(V)
600
500
400
300
200
100
0
0
30
60
90
120
150
Q
gs
Q
gd
V
DD
= 520 V, I
D
= 68 A
Q
g
GADG060620191331QVG
V
GS
Figure 6.
Typical drain-source on-resistance
R
DS(on)
(mΩ)
39
38
37
36
35
34
33
0
10
20
30
40
50
60
I
D
(A)
V
GS
=10 V
GADG060620191329RID
(V)
12
10
8
6
4
2
0
Q
g
(nC)
DS13144
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Rev 2
page 5/12
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