RQ5E015RP
Pch -30V -1.5A Small Signal MOSFET
Datasheet
l
Outline
V
DSS
R
DS(on)
(Max.)
I
D
P
D
-30V
160mΩ
±1.5A
1.0W
SOT-346T
SC-96
TSMT3
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Inner circuit
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Features
1) Low on - resistance
2) Built-in G-S Protection Diode
3) Small Surface Mount Package (TSMT3)
4) Pb-free lead plating ; RoHS compliant
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Packaging specifications
Packing
Reel size (mm)
Tape width (mm)
Quantity (pcs)
Taping code
Marking
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Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified)
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Application
Type
Switching
Embossed
Tape
180
8
3000
TL
VH
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Power dissipation
Junction temperature
Operating junction and storage temperature range
Symbol
V
DSS
I
D
I
DP*1
V
GSS
P
D*2
P
D*3
T
j
T
stg
Value
-30
±1.5
±6
±20
1.0
0.7
150
-55 to +150
Unit
V
A
A
V
W
W
℃
℃
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© 2019 ROHM Co., Ltd. All rights reserved.
1/11
20190527 - Rev.002
RQ5E015RP
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Thermal resistance
Datasheet
Parameter
Symbol
R
thJA*2
R
thJA*3
Values
Min.
-
-
Typ.
-
-
Max.
125
178
Unit
℃
/W
℃
/W
Thermal resistance, junction - ambient
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Electrical characteristics (T
a
= 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
Symbol
Conditions
Values
Min.
-30
-
-
-
-1.0
-
-
-
-
-
1.2
Typ.
-
-24.1
-
-
-
3.3
115
170
190
27
-
Max.
-
-
-1
±10
-2.5
-
160
240
270
-
-
Unit
V
(BR)DSS
V
GS
= 0V, I
D
= -1mA
Δ
V
(BR)DSS
I
D
= -1mA
ΔT
j
referenced to 25
℃
V
mV/
℃
μA
μA
V
mV/
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= -30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= -10V, I
D
= -1mA
Δ
V
GS(th)
I
D
= -1mA
ΔT
j
referenced to 25
℃
V
GS
= -10V, I
D
= -1.5A
R
DS(on)*4
V
GS
= -4.5V, I
D
= -0.7A
V
GS
= -4.0V, I
D
= -0.7A
R
G
|Y
fs
|
*4
f = 1MHz, open drain
V
DS
= -10V, I
D
= -1.5A
mΩ
Ω
S
*1 Pw
≦
10μs , Duty cycle
≦
1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
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© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20190527 - Rev.002
RQ5E015RP
Datasheet
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Electrical characteristics
(T
a
= 25°C)
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*4
t
r*4
t
d(off)*4
t
f*4
Conditions
Min.
V
GS
= 0V
V
DS
= -10V
f = 1MHz
V
DD
⋍
-15V,V
GS
= -10V
Unit
Typ.
230
40
33
12
8
40
13
Max.
-
-
-
-
-
ns
-
-
-
-
pF
-
-
-
-
-
I
D
= -0.7A
R
L
⋍
21.4Ω
R
G
= 10Ω
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Gate charge characteristics
(T
a
= 25°C)
Values
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Q
g*4
Q
gs*4
Q
gd*4
Conditions
Min.
V
DD
⋍
-15V,
I
D
= -1.5A,
V
GS
= -5V
-
-
-
Typ.
3.2
1.2
0.7
Max.
-
-
-
nC
Unit
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
Values
Parameter
Continuous forward current
Pulse forward current
Forward voltage
Symbol
I
S
I
SP*1
V
SD*4
Conditions
Min.
T
a
= 25
℃
V
GS
= 0V, I
S
= -1.5A
-
-
-
Typ.
-
-
-
Max.
-0.8
-6
-1.2
A
A
V
Unit
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© 2019 ROHM Co., Ltd. All rights reserved.
3/11
20190527 - Rev.002
RQ5E015RP
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2019 ROHM Co., Ltd. All rights reserved.
4/11
20190527 - Rev.002
RQ5E015RP
Datasheet
l
Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
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© 2019 ROHM Co., Ltd. All rights reserved.
5/11
20190527 - Rev.002
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