QH8K51
100V Nch+Nch Small Signal MOSFET
Datasheet
l
Outline
V
DSS
R
DS(on)
(Max.)
I
D
P
D
l
Features
100V
325mΩ
±2A
1.5W
TSMT8
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Inner circuit
1) Low on - resistance
2) Small Surface Mount Package (TSMT8)
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Packaging specifications
Packing
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Application
Embossed
Tape
180
8
3000
TR
K51
Value
100
±2
±6
±20
1.5
1.25
1.1
150
-55 to +150
℃
℃
Reel size (mm)
Type
Tape width (mm)
Quantity (pcs)
Taping code
Marking
Switching
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Absolute maximum ratings
(T
a
= 25°C ,unless otherwise specified) <Tr1 and Tr2>
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
total
Power dissipation
Junction temperature
Operating junction and storage temperature range
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© 2019 ROHM Co., Ltd. All rights reserved.
Symbol
V
DSS
I
D
I
DP*1
V
GSS
element
total
P
D*2
P
D*3
T
j
T
stg
1/11
Unit
V
A
A
V
W
20190527 - Rev.003
QH8K51
l
Thermal resistance
Datasheet
Parameter
total
Thermal resistance, junction - ambient
element
total
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Electrical characteristics (T
a
= 25°C)
<Tr1 and Tr2>
Symbol
R
thJA*2
R
thJA*3
Values
Min.
-
-
-
Typ.
-
-
-
Max.
83.3
100
113
Unit
℃
/W
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source
leakage current
Gate threshold
voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Gate resistance
Forward Transfer
Admittance
Symbol
Conditions
Values
Min.
100
-
-
-
1.0
-
-
-
-
-
1.9
Typ.
-
116.9
-
-
-
-3.6
240
250
260
8.5
-
Max.
-
-
1
±10
2.5
-
325
340
355
-
-
Unit
V
mV/
℃
μA
μA
V
mV/
℃
V
(BR)DSS
V
GS
= 0V, I
D
= 1mA
Δ
V
(BR)DSS
I
D
= 1mA
ΔT
j
referenced to 25
℃
I
DSS
I
GSS
V
GS(th)
V
DS
= 100V, V
GS
= 0V
V
DS
= 0V, V
GS
= ±20V
V
DS
= 10V, I
D
= 1mA
Δ
V
GS(th)
I
D
= 1mA
ΔT
j
referenced to 25
℃
V
GS
= 10V, I
D
= 2A
R
DS(on)*4
V
GS
= 4.5V, I
D
= 2A
V
GS
= 4.0V, I
D
= 2A
R
G
|Y
fs
|
*4
f = 1MHz, open drain
V
DS
= 10V, I
D
= 2A
mΩ
Ω
S
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© 2019 ROHM Co., Ltd. All rights reserved.
2/11
20190527 - Rev.003
QH8K51
Datasheet
l
Electrical characteristics
(T
a
= 25°C) <Tr1 and Tr2>
Values
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)*4
t
r*4
t
d(off)*4
t
f*4
Conditions
Min.
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
DD
⋍
50V,V
GS
= 10V
Unit
Typ.
290
30
20
10
10
30
15
Max.
-
-
-
-
-
ns
-
-
-
-
pF
-
-
-
-
-
I
D
= 1A
R
L
= 49.9Ω
R
G
= 10Ω
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Gate charge characteristics
(T
a
= 25°C) <Tr1 and Tr2>
Values
Parameter
Total gate charge
Gate - Source charge
Gate - Drain charge
Symbol
Q
g*4
Q
gs*4
Q
gd*4
Conditions
Min.
V
DD
⋍
50V
I
D
= 2A
V
GS
= 5V
-
-
-
Typ.
4.7
1.2
1.8
Max.
-
-
-
nC
Unit
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Body diode electrical characteristics
(Source-Drain) (T
a
= 25°C)
<Tr1 and Tr2>
Values
Parameter
Continuous forward current
Pulse forward current
Forward voltage
*1 Pw
≦
10μs , Duty cycle
≦
1%
*2 Mounted on a ceramic board (30×30×0.8mm)
*3 Mounted on a FR4 (25×25×0.8mm)
*4 Pulsed
Symbol
I
S
I
SP*1
V
SD*4
Conditions
Min.
T
a
= 25
℃
V
GS
= 0V, I
S
= 2A
-
-
-
Typ.
-
-
-
Max.
1.0
Unit
A
6
1.2
V
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© 2019 ROHM Co., Ltd. All rights reserved.
3/11
20190527 - Rev.003
QH8K51
Datasheet
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Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power
dissipation
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© 2019 ROHM Co., Ltd. All rights reserved.
4/11
20190527 - Rev.003
QH8K51
Datasheet
l
Electrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
Fig.8 Typical Transfer Characteristics
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© 2019 ROHM Co., Ltd. All rights reserved.
5/11
20190527 - Rev.003
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