Datasheet
6 V to 28 V, 1.2 A 1ch
Step-Down Switching Regulator
Integrated Power MOSFET
BD9E151ANUX
General Description
BD9E151ANUX is diode-rectification buck converter of
high input voltage 28 V with integrated Power MOSFET.
Because of diode-rectification, a pulse skips in light load
automatically and it maintains high efficiency. In addition,
it is available for battery powered application because
supply current is small with 0 uA at shutdown. It can easily
make a small power supply with the external parts of the
wide range, because the use of ceramic capacitor is
possible, and because it has high speed road response by
current mode control and has the external setting phase
compensation.
Key Specifications
Input Voltage Range:
6 V to 28 V
Reference Voltage Precision (Ta = 25 °C):1 V ± 1.0 %
Max Output Current:
1.2 A (Max)
Operating Temperature Range:
-40 °C to +85 °C
W (Typ) x D (Typ) x H (Max)
2.0 mm x 3.0 mm x 0.6 mm
Package
VSON008X2030
Features
Wide Input Range (VIN = 6 V to 28 V)
30 V / 80 mΩ Integrated Power MOSFET
600 kHz (Typ) High Frequency Operation
Built in Reference Voltage (1.0 V ± 1.0 %)
Built in Over Current Protection (OCP), Under Voltage
Lockout (UVLO), Over Voltage Protection (OVP),
Thermal Shutdown (TSD)
Stand-by mode (I
IN
= 0 μA)
VSON008X2030 Small Package
Applications
Surveillance Camera Applications
Consumer 12 V, 24 V BUS-Line Systems
OA Applications
Typical Application Circuit
C
BST
:
BST
: 0.1μF
C
0.1 μF
1
BST
LX
8
D1
L: 15 μH
L: 15μH
C
out
:
:
OUT
47μF/16V
V
47 μF / 16
V
OUT
C
VIN
:
VIN
: 10μF/35V
C
10 μF / 35 V
VIN
2
VIN
GND
7
ON/OFF
control
3
EN
VC
6
4
C
: 0.047 μF
C
SS
SS
: 0.047μF
SS
FB
5
C1:
10000pF
C1:
10000 pF
R3: 2.7 kΩ
R3: 2.7kΩ
R1: 12 kΩ
R1: 12kΩ
R2: 3 kΩ
R2: 3kΩ
〇Product
structure : Silicon integrated circuit
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〇This
product has no designed protection against radioactive rays.
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BD9E151ANUX
Pin Configuration
(TOP VIEW)
BST
VIN
EN
SS
1
2
8
7
Lx
LX
GND
VC
FB
EXP-PAD
3
4
6
5
Pin Descriptions
Pin No.
1
2
3
4
5
6
7
8
-
Pin Name
BST
VIN
EN
SS
FB
VC
GND
LX
EXP-PAD
Input Supply Pin
EN Pin
Soft Start Setting Pin
Feedback Input Pin
Error AMP Output Pin
Ground
Switching Pin
The EXP-PAD connect to GND
Function
Bootstrap Capacitor Connecting Pin
Block Diagram
ON/OFF
EN
VIN
TSD
UVLO
Reference
VREF
REG
Current Sense
AMP
shutdown
BST
Current
Comparator
Σ
80 mΩ
FB
1.0 V
-
+
+
Error
AMP
-
+
R Q
S
LX
VOUT
SS
Soft
Start
Oscillator
GND
VC
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BD9E151ANUX
Description of Blocks
1.
Reference
This block generates reference voltage. It starts operation by EN pin High.
It provides reference voltage to error amplifier reference voltage 1.0 V (Typ), reference of oscillator, and etc.
REG
This is a gate drive and regulator for internal circuit power supply.
Oscillator
This is an oscillation circuit with operation frequency fixed to 600 kHz (Typ).
Soft Start
This is a circuit that gently raises the output voltage of the DC / DC converter to prevent in-rush current during start-up.
Soft start time is determined by the capacitor connected to SS pin and SS pin charge current.
Error AMP
This is an error amplifier circuit that detects the output signal, and outputs PWM control signal.
Internal reference voltage is set to 1.0 V (Typ).
OVP
Output voltage is monitored with the FB pin, and output FET is turned off when it becomes 110 % or more of setting
value.
When the output voltage becomes 105 % or less, it makes possible to turn on FET again.
Current Comparator
This is comparator that outputs PWM signal from current feed-back and error amp output for current mode.
OCP
Current flowing FET is monitored, and output FET is turned off when it detects over current 2.2 A (Typ).
When over current is detected for two consecutive cycles, the device is turned off with latch.
Then the SS pin voltage and VC pin voltage is reset, and the device is automatically restarted when the SS pin voltage
reaches 0.1 V.
Power MOSFET
This is power MOSFET with maximum voltage 30 V and on-resistance 80 mΩ.
It should be used within 1.6 A including ripple current of inductor because the current limiting of power MOSFET is 1.6 A.
2.
3.
4.
5.
6.
7.
8.
9.
10. UVLO
This is a low voltage error prevention circuit.
This prevents internal circuit error during increase and decrease of power supply voltage.
VIN pin voltage is monitored, and it turns off output FET and resets Soft Start circuit when VIN voltage becomes UVLO
detect threshold or less. UVLO detect threshold has hysteresis.
11. TSD
This is over thermal protection circuit.
When it detects the temperature exceeding maximum junction temperature (Tjmax = 150 °C), it turns off the output FET,
and resets Soft Start circuit. When the temperature decreased, It has hysteresis and the device is automatically
restarted.
12. EN
When Voltage 2.4 V or more is supplied to this pin, it turns on. When open or voltage 0.8V or less is supplied, it turns off.
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BD9E151ANUX
Absolute Maximum Ratings (Ta = 25 °C)
Parameter
Supply Voltage
BST – GND
BST – LX
EN – GND
LX – GND
FB – GND
VC – GND
SS – GND
Power MOSFET Current
Maximum Junction Temperature
Storage Temperature Range
Symbol
VIN
V
BST
∆V
BST
V
EN
V
LX
V
FB
V
VC
V
SS
I
DH
Tjmax
Tstg
Rating
30
37
7
30
30
7
7
7
1.6
150
-55 to +125
Unit
V
V
V
V
V
V
V
V
A
°C
°C
Caution 1:
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2:
Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by
increasing board size and copper area so as not to exceed the maximum junction temperature rating.
Thermal Resistance
(Note 1)
Parameter
VSON008X2030
Junction to Ambient
Junction to Top Characterization Parameter
(Note 2)
θ
JA
Ψ
JT
308.3
43
69.6
10
°C/W
°C/W
Symbol
Thermal Resistance (Typ)
1s
(Note 3)
2s2p
(Note 4)
Unit
(Note 1)
Based on JESD51-2A (Still-Air).
(Note 2)
The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3)
Using a PCB board based on JESD51-3.
(Note 4)
Using a PCB board based on JESD51-5, 7.
Layer Number of
Measurement Board
Single
Top
Copper Pattern
Footprints and Traces
Layer Number of
Measurement Board
4 Layers
Top
Copper Pattern
Footprints and Traces
Material
FR-4
Thickness
70 μm
Material
FR-4
Thickness
70 μm
Board Size
114.3 mm x 76.2 mm x 1.57 mmt
Board Size
114.3 mm x 76.2 mm x 1.6 mmt
2 Internal Layers
Copper Pattern
74.2 mm x 74.2 mm
Thickness
35 μm
Thermal Via
(Note 5)
Pitch
Diameter
1.20 mm
Φ0.30 mm
Bottom
Copper Pattern
74.2 mm x 74.2 mm
Thickness
70 μm
(Note 5)
This thermal via connects with the copper pattern of all layers. The arrangement should follow to land patterns.
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BD9E151ANUX
Recommended Operating Conditions
Parameter
Supply Voltage
Symbol
VIN
Min
6
1.0
Typ
-
Max
28
VIN x
0.7
or
VIN – 5
(Note 7)
Unit
V
Output Voltage
V
OUT
(Note 6)
-
V
Output Current
Operating Temperature
I
OUT
Topr
-
-40
-
+25
1.2
+85
A
°C
(Note 6)
Restricted by minimum on pulse typ. 100 nsec.
(Note 7)
Restricted by BSTUVLO or Max Duty Cycle (ref. p.14). Please set value of the low one for the maximum.
Electrical Characteristics (Unless otherwise specified VIN = 12 V, V
OUT
= 5 V, EN = 5 V, Ta = 25 °C)
Parameter
Circuit Current
Stand-by Current of VIN
Operating Circuit Current of VIN
Undervoltage Lockedout
Reset Threshold Voltage
Hysteresis Width
Oscillator
Oscillating Frequency
Max Duty Cycle
Error AMP
FB Threshold Voltage
FB Input Current
DC Gain
Transconductance
Current Sense Amplifier
Transconductance
Output
High-Side Power MOSFET ON
Resistance
High-Side Over Current Detect
Current
CTL
EN Threshold Voltage
EN Input Current
SOFT START
Charge Current
I
SS
1
2
4
μA
ON
OFF
G
CS
R
ONH
I
OCP
V
ENON
V
ENOFF
I
EN
-
10
80
2.2
20
160
-
VIN
0.8
15.0
A/V
mΩ
A
V
V
μA
V
FBTH
I
FB
A
VEA
G
EA
0.990
-1.0
-
-
1.000
0
600
250
1.010
1.0
6000
500
V
μA
V/V
μA/V
I
VC
= ±10 μA, V
VC
= 1.0 V
V
FB
= 0 V
f
SW
D
MAX
540
85
600
91
660
-
kHz
%
V
UV
V
UVHY
5.0
-
5.4
200
5.8
400
V
mV
VIN rising
I
ST
I
IN
-
-
0
0.8
10
1.6
μA
mA
V
EN
= 0 V
V
FB
= 1.5 V
Symbol
Min
Typ
Max
Unit
Conditions
-
1.6
2.4
-0.3
6.0
-
-
7.0
Ta = -40 °C to +85 °C
VIN = 6 V to 28 V
V
EN
= 5 V
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