Produktdatenblatt | Version 1.1
SFH 320 FA
www.osram-os.com
SFH 320 FA
TOPLED
®
Silicon NPN Phototransistor in SMT TO-
PLED®-Package
Applications
—
Electronic Equipment
—
White Goods
Features:
—
Package: black epoxy
—
ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
—
Spectral range of sensitivity: (typ) 750 ... 1120 nm
—
High linearity
—
P-LCC-2 package
—
Available in groups
—
Suitable for all soldering methods
Ordering Information
Type
Photocurrent
V
CE
= 5 V;
λ
= 950 nm; E
e
= 0.1 mW/cm²
I
PCE
40 ... 80 µA
25 ... 50 µA
16 ... 80 µA
25 ... 80 µA
Ordering Code
SFH 320 FA-4-Z
SFH 320 FA-3-Z
SFH 320 FA-Z
SFH 320 FA-3/4-Z
Q65110A1836
Q65110A2470
Q65110A2472
Q65110A2475
Only one bin within one packing unit (variation less than 2:1)
1
Version 1.5
| 2018-10-02
SFH 320 FA
Maximum Ratings
T
A
= 25 °C
Parameter
Operating temperature
Storage temperature
Collector-emitter voltage
Collector current
Collector surge current
τ ≤ 10 µs
Total power dissipation
ESD withstand voltage
acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
Symbol
T
op
T
stg
V
CE
I
C
I
CS
P
tot
V
ESD
min.
max.
min.
max.
max.
max.
max.
max.
max.
Values
-40 °C
100 °C
-40 °C
100 °C
35 V
15 mA
75 mA
165 mW
2 kV
2
Version 1.5
| 2018-10-02
SFH 320 FA
Characteristics
T
A
= 25 °C
Parameter
Wavelength of max sensitivity
Spectral range of sensitivity
Chip dimensions
Radiant sensitive area
Ø
= 220 µm
Half angle
Dark current
V
CE
= 20 V; E = 0
Rise time
I
C
= 1 mA; V
CC
= 5 V; R
L
= 1 kΩ
Fall time
I
C
= 1 mA; V
CC
= 5 V; R
L
= 1 kΩ
Collector-emitter saturation voltage
1)
I
C
= I
PCE,min
X 0.3; E
e
= 0.1 mW/cm²
Capacitance
V
CE
= 0 V; f = 1 MHz; E = 0
Thermal resistance junction ambient real
Symbol
λ
S max
λ
10%
LxW
A
φ
I
CE0
t
r
t
f
V
CEsat
C
CE
R
thJA
typ.
typ.
typ.
typ.
typ.
typ.
max.
typ.
typ.
typ.
typ.
max.
Values
980 nm
750 ... 1120
nm
0.45 x 0.45
mm x mm
0.038 mm²
60 °
1 nA
50 nA
7 µs
7 µs
150 mV
5 pF
450 K / W
Grouping
T
A
= 25 °C
Group
Photocurrent
V
CE
= 5 V;
λ
= 950 nm; E
e
= 0.1 mW/cm²
min.
I
PCE
16 µA
25 µA
40 µA
Photocurrent
V
CE
= 5 V;
λ
= 950 nm; E
e
= 0.1 mW/cm²
max.
I
PCE
32 µA
50 µA
80 µA
2
3
4
Only one bin within one packing unit (variation less than 2:1).
3
Version 1.5
| 2018-10-02
SFH 320 FA
Relative Spectral Sensitivity
S
rel
= f (λ)
2), 3)
100
S
rel
%
80
OHF00468
60
40
20
0
400 500 600 700 800 900
λ
nm 1100
Directional Characteristics
S
rel
= f (φ)
40
30
2), 3)
20
10
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
90
0.2
0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
4
Version 1.5
| 2018-10-02
SFH 320 FA
Photocurrent
10
3
µ
A
2), 3)
Photocurrent
OHF01924
2), 3)
I
PCE
= f (E
e
) ; V
CE
= 5 V
I
PCE
= f (V
CE
), E
e
= Parameter
10
0
mA
OHF01529
Ι
PCE
Ι
PCE
1
0.5
0.25
mW
cm
2
mW
cm
2
mW
cm
2
mW
cm
2
10
2
4
3
2
10
1
10
-1
0.1
10
0
10
-1 -3
10
10
-2
mW/cm
2
10
E
e
0
10
-2
0
5
10
15
20
25
30 V 35
V
CE
Dark Current
10
1
nA
2), 3)
I
CE0
= f (V
CE
) ; E = 0 ;
OHF01527
Ι
CEO
10
0
10
-1
10
-2
10
-3
0
5
10
15
20
25
30 V 35
V
CE
5
Version 1.5
| 2018-10-02
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