Produktdatenblatt | Version 1.1
SFH 320
www.osram-os.com
SFH 320
TOPLED
®
Silicon NPN Phototransistor in SMT Package
Applications
—
Electronic Equipment
—
White Goods
Features:
—
Package: clear epoxy
—
ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
—
Spectral range of sensitivity: (typ) 450 ... 1150 nm
—
High linearity
—
P-LCC-2 package
—
Available in groups
—
Suitable for all soldering methods
Ordering Information
Type
Photocurrent
1)
V
CE
= 5 V;
λ
= 950 nm; E
e
= 0.1 mW/cm²
I
PCE
28 ... 71 µA
28 ... 45 µA
18 ... 71 µA
45 ... 71 µA
Ordering Code
SFH 320-3/4-Z
SFH 320-3-Z
SFH 320-Z
SFH 320-4-Z
Q65110A1781
Q65110A2469
Q65110A2471
Q65110A2510
Only one bin within one packing unit (variation less than 2:1)
1
Version 1.7
| 2021-11-22
SFH 320
Maximum Ratings
T
A
= 25 °C
Parameter
Operating temperature
Storage temperature
Collector-emitter voltage
Collector current
Collector surge current
τ ≤ 10 µs
Total power dissipation
ESD withstand voltage
acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
Symbol
T
op
T
stg
V
CE
I
C
I
CS
P
tot
V
ESD
min.
max.
min.
max.
max.
max.
max.
max.
max.
Values
-40 °C
100 °C
-40 °C
100 °C
35 V
15 mA
75 mA
165 mW
2 kV
2
Version 1.7
| 2021-11-22
SFH 320
Characteristics
T
A
= 25 °C
Parameter
Wavelength of max sensitivity
Spectral range of sensitivity
Dimensions of chip area
Radiant sensitive area
Half angle
Photocurrent
V
CE
= 5 V; Std. Light A; E
v
= 1000 lx
Dark current
V
CE
= 20 V; E = 0
Rise time
I
C
= 1 mA; λ = 950 nm; V
CC
= 5 V; R
L
= 1 kΩ
Fall time
I
C
= 1 mA; λ = 950 nm; V
CC
= 5 V; R
L
= 1 kΩ
Collector-emitter saturation voltage
2)
I
C
= I
PCE,min
X 0.3; λ = 950 nm; E
e
= 0.1 mW/cm²
Capacitance
V
CE
= 0 V; f = 1 MHz; E = 0
Thermal resistance junction ambient real
Symbol
λ
S max
λ
10%
LxW
A
φ
I
PCE
I
CE0
t
r
t
f
V
CEsat
C
CE
R
thJA
typ.
typ.
typ.
typ.
typ.
typ.
typ.
max.
typ.
typ.
typ.
typ.
max.
Values
980 nm
450 ... 1150
nm
0.45 x 0.45
mm x mm
0.038 mm²
60 °
650 µA
1 nA
50 nA
7 µs
7 µs
150 mV
5 pF
450 K / W
3
Version 1.7
| 2021-11-22
SFH 320
Photocurrent Groups
T
A
= 25 °C
Group
Photocurrent
1)
V
CE
= 5 V;
λ
= 950 nm; E
e
= 0.1 mW/cm²
min.
I
PCE
18 µA
28 µA
45 µA
Photocurrent
1)
V
CE
= 5 V;
λ
= 950 nm; E
e
= 0.1 mW/cm²
max.
I
PCE
28 µA
45 µA
71 µA
2
3
4
Relative Spectral Sensitivity
S
rel
= f (λ)
3), 4)
S
rel
100
%
80
70
60
50
40
30
20
10
0
400 500 600 700 800 900
OHF00207
λ
nm 1100
4
Version 1.7
| 2021-11-22
SFH 320
Directional Characteristics
S
rel
= f (φ)
40
30
3), 4)
20
10
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
90
0.2
0
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Photocurrent
10
3
µ
A
3), 4)
Photocurrent
OHF01924
3), 4)
I
PCE
= f (E
e
) ; V
CE
= 5 V
I
PCE
= f (V
CE
); E
e
= Parameter
10
0
mA
OHF01529
Ι
PCE
Ι
PCE
1
0.5
0.25
mW
cm
2
mW
cm
2
mW
cm
2
mW
cm
2
10
2
10
1
4
3
2
10
-1
0.1
10
0
10
-1 -3
10
10
-2
mW/cm
2
10
E
e
0
10
-2
0
5
10
15
20
25
30 V 35
V
CE
5
Version 1.7
| 2021-11-22
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