FSB50760BSF PDF数据手册_FSB50760BSF 特性/功能/参数/引脚图_ON Semiconductor(安森美) 功率驱动器

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FSB50760BSF /

FSB50760BSFS

Motion SPM

)

5 SUPERFET

)

Series

General Description

The FSB50760BSF / FSB50760BSFS is an advanced Motion

SPM 5 module providing a fully−featured, high−performance inverter

output stage for AC Induction, BLDC and PMSM motors such as

refrigerators, fans and pumps. These modules integrate optimized gate

drive of the built−in MOSFETs (SuperFET technology) to minimize

EMI and losses, while also providing multiple on−module protection

features including under−voltage lockouts and thermal monitoring.

The built−in high−speed HVIC requires only a single supply voltage

and translates the incoming logic−level gate inputs to the

high−voltage, high−current drive signals required to properly drive the

module’s internal MOSFETs. Separate open−source MOSFET

terminals are available for each phase to support the widest variety of

control algorithms.

Features

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SPM5E−023 / 23LD, PDD STD

CASE MODEJ

•

UL Certified No. E209204 (UL1557)

•

600 V R

DS(ON)

= 830 mW (Max) SuperFET MOSFET 3−Phase

•

Inverter with Gate Drivers and Protection

Built−In Bootstrap Diodes Simplify PCB Layout

Separate Open−Source Pins from Low−Side MOSFETs for

Three−Phase Current−Sensing

Active−HIGH Interface, Works with 3.3 / 5 V Logic, Schmitt−trigger

Input

Optimized for Low Electromagnetic Interference

HVIC Temperature−Sensing Built−In for Temperature Monitoring

HVIC for Gate Driving and Under−Voltage Protection

Isolation Rating: 1500 V

rms

/ min.

Moisture Senstive Level (MSL) 3

These Devices are Pb−Free and are RoHS Compliant

SPM5H−023 / 23LD, PDD STD,

SPM23−BD

CASE MODEM

MARKING DIAGRAM

$Y

FSB50760BX

&Z&K&E&E&E&3

$Y

&Z

&3

&K

FSB50760X

Applications

= ON Semiconductor Logo

= Assembly Plant Code

= Data Code (Year & Week)

= Lot

= Specific Device Code

⇒

X = SF or SFS

•

3−Phase Inverter Driver for Small Power AC Motor Drives

Related Source

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

•

RD−402: Reference Design for Motion SPM 5 Super− FET Series

•

AN−9082

−

Motion SPM5 Series Thermal Performance by Contact

Pressure

•

AN−9082: User’s Guide for Motion SPM 5 Series V2

©

Semiconductor Components Industries, LLC, 2019

April, 2019

−

Rev. 2

1

Publication Order Number:

FSB50760BSF/D

FSB50760BSF / FSB50760BSFS

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

50760BSF

50760BSFS

Device

FSB50760BSF

FSB50760BSFS

Package

SPM5P−023

SPM5Q−023

Reel Size

Rail

Tape & Reel

Packing Type

NA

330 mm

Quantity

15

450

ABSOLUTE MAXIMUM RATINGS

(T

C

= 25°C, Unless otherwise noted)

Symbol

Parameter

Conditions

Rating

Unit

INVERTER PART

(Each MOSFET Unless Otherwise Specified)

V

PN

BV

DSS

I

PN

DC Link Input Voltage,

Drain−Source Voltage of Each MOSFET

Drain−Source Voltage

Zero−Bias Static Leakage Current

V

IN

= 0V, I

D

= 250

mA

V

PN

= 400 V, V

IN

= 0 V,

V

DD

= V

BS

= 0 V,

T

C

= T

J

= 25°C for all phase

T

C

= 25°C

T

C

= 80°C

T

C

= 25°C, PW < 100

ms

T

C

= 80°C, F

PWM

< 20 kHz

T

C

= 25°C, For Each MOSFET

Applied Between V

DD

and COM

Applied Between V

B

and V

S

Applied Between IN and COM

600

40

V

mA

*I

D 25

*I

D 80

*I

DP

*I

DRMS

*P

D

V

DD

V

BS

V

IN

Each MOSFET Drain Current, Continuous

Each MOSFET Drain Current, Peak

Each FRFET Drain Current, Rms

Maximum Power Dissipation

3.6

2.7

9.4

1.9

14.5

A

rms

W

CONTROL PART

(Each HVIC Unless Otherwise Specified)

Control Supply Voltage

High−side Bias Voltage

Input Signal Voltage

20

−0.3

~ V

DD

+0.3

V

BOOTSTRAP DIODE PART

(Each Bootstrap Diode Unless Otherwise Specified.)

V

RRMB

* I

FB

* I

FPB

R

th(j−c)Q

Maximum Repetitive Reverse Voltage

Forward Current

Forward Current (Peak)

T

C

= 25°C

T

C

= 25°C, Under 1ms Pulse Width

Inverter MOSFET part, (Per Module)

600

0.5

1.5

V

A

THERMAL RESISTANCE

Junction to Case Thermal Resistance

(Note 1)

2.15

°C/W

TOTAL SYSTEM

T

J

T

STG

V

ISO

Operating Junction Temperature

Storage Temperature

Isolation Voltage

60 Hz, Sinusoidal, 1 minute,

Connection Pins to Heatsink

−40

~ 150

−40

~ 125

1500

°C

V

rms

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. For the Measurement Point of Case Temperature T

C

, Please refer to Figure 4.

2. Marking “ * ” Is Calculation Value or Design Factor.

3. Using contiunously under heavy loads or excessive assembly conditions (e.g. the application of high temperature/ current/ voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions

(i.e. operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings and the operating ranges.

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2

FSB50760BSF / FSB50760BSFS

PIN DESCRIPTIONS

Pin No.

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

Pin Name

COM

V

B(U)

V

DD(U)

IN

(UH)

IN

(UL)

N.C

V

B(V)

V

DD(V)

IN

(VH)

IN

(VL)

V

TS

V

B(W)

V

DD(W)

IN

(WH)

IN

(WL)

N.C

P

U, V

S(U)

N

U

N

V

V, V

S(V)

N

W

W, V

S(W)

IC Common Supply Ground

Bias Voltage for U Phase High Side FRFET Driving

Bias Voltage for U Phase IC and Low Side FRFET Driving

Signal Input for U Phase High−side

Signal Input for U Phase Low−side

N.C

Bias Voltage for V Phase High Side FRFET Driving

Bias Voltage for V Phase IC and Low Side FRFET Driving

Signal Input for V Phase High−side

Signal Input for V Phase Low−side

Output for HVIC Temperature Sensing

Bias Voltage for W Phase High Side FRFET Driving

Bias Voltage for W Phase IC and Low Side FRFET Driving

Signal Input for W Phase High−side

Signal Input for W Phase Low−side

N.C

Positive DC–Link Input

Output for U Phase & Bias Voltage Ground for High Side FRFET Driving

Negative DC–Link Input for U Phase

Negative DC–Link Input for V Phase

Output for V Phase & Bias Voltage Ground for High Side FRFET Driving

Negative DC–Link Input for W Phase

Output for W Phase & Bias Voltage Ground for High Side FRFET Driving

Pin Description

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3

FSB50760BSF / FSB50760BSFS

(1) COM

(2) V

B(U)

(3) V

CC(U)

(4) IN

(UH)

(5) IN

(UL)

(6) N.C

(7) V

B(V)

(8) V

CC(V)

(9) IN

(VH)

(10) IN

(VL)

(11) V

TS

(12) V

B(W)

(13) V

CC(W)

(14) IN

(WH)

(15) IN

(WL)

(16) N.C

VCC

HIN

LIN

COM

V

TS

VCC

HIN

LIN

COM

VB

HO

VS

LO

VB

HO

VS

LO

(17) P

VCC

HIN

LIN

COM

VB

HO

VS

LO

(18) U, V

S(U)

(19) N

U

(20) N

V

(21) V, V

S(V)

(22) N

W

(23) W, V

S(W)

4. Source Terminal of Each Low−Side MOSFET is Not Connected to Supply Ground or Bias Voltage Ground Inside Motion

SPM 5 product. External Connections Should be Made as Indicated in Figure 3.

Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)

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4

参数名称	属性值
类别	分立半导体;功率驱动器
厂商名称	ON Semiconductor(安森美)
系列	Motion SPM® 5 SuperFET®
包装	管件
类型	MOSFET
配置	三相反相器
电流	3.6 A
电压	600 V
电压 - 隔离	1500Vrms
安装类型	通孔
封装/外壳	23-PowerDIP 模块（0.551"，14.00mm）
基本产品编号	FSB50760

FSB50760BSF

FSB50760BSF概述

FSB50760BSF规格参数

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