DATA SHEET
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Silicon Carbide (SiC)
Schottky Diode
– EliteSiC,
8 A, 650 V, D2, TO-220-2L
FFSP0865B
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
V
RRM
650 V
I
F
8.0 A
1., 3. Cathode
2. Anode
Schottky Diode
•
•
•
•
•
•
•
Max Junction Temperature 175°C
Avalanche Rated 33 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
TO−220−2LD
CASE 340BB
MARKING DIAGRAM
Applications
•
General Purpose
•
SMPS, Solar Inverter, UPS
•
Power Switching Circuits
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)s
Parameter
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (T
J
= 25°C,
I
L(pk)
= 11.5 A, L = 0.5 mH, V = 50 V)
Continuous Rectified Forward
Current
Non−Repetitive Peak Forward
Surge Current
@ T
C
< 147
@ T
C
< 135
T
C
= 25°C
t
P
= 10
ms
T
C
= 150°C
t
P
= 10
ms
Non−Repetitive Forward Surge
Current (Half−Sine Pulse)
Power Dissipation
T
C
= 25°C
t
P
= 8.3 ms
T
C
= 25°C
T
C
= 150°C
Operating Junction and Storage Temperature
Range
T
J
, T
stg
I
FSM
P
tot
I
FM
Symbol
V
RRM
E
AS
I
F
Value
650
33
8.0
10.1
551
498
56
73
12
−55
to
+175
°C
A
W
A
Unit
V
mJ
A
FFSP0865B
A
Y
WW
ZZ
FFSP
0865B
AYWWZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2019
January, 2023
−
Rev. 2
1
Publication Order Number:
FFSP0865B/D
FFSP0865B
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction−to−Case, Max.
Symbol
R
qJC
Value
2.05
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
ON CHARACTERISTICS
Forward Voltage
V
F
I
F
= 8.0 A, T
J
= 25°C
I
F
= 8.0 A, T
J
= 125°C
I
F
= 8.0 A, T
J
= 175°C
Reverse Current
I
R
V
R
= 650 V, T
J
= 25°C
V
R
= 650 V, T
J
= 125°C
V
R
= 650 V, T
J
= 175°C
CHARGES, CAPACITANCES & GATE RESISTANCE
Total Capacitive Charge
Q
C
C
tot
V
C
= 400 V
V
R
= 1 V, f = 100 kHz
V
R
= 200 V, f = 100 kHz
V
R
= 400 V, f = 100 kHz
22
336
39
30
nC
pF
1.39
1.55
1.71
0.073
0.24
0.48
1.7
2.0
2.4
40
80
160
mA
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
FFSP0865B
Top Marking
FFSP0865B
Package
TO−220−2L
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure,
BRD8011/D.
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2
FFSP0865B
TYPICAL CHARACTERISTICS
8
I
F
, FORWARD CURRENT (A)
T
J
=
−55
o
C
T
J
= 25
o
C
T
J
= 75
o
C
4
T
J
= 125
o
C
T
J
= 175
o
C
2
10
−6
6
I
R
, REVERSE CURRENT (A)
10
−7
T
J
= 175
o
C
10
−8
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
T
J
=
−55
o
C
200
300
400
500
600 650
V
R
, REVERSE VOLTAGE (V)
0
0.0
0.4
0.8
1.2
1.6
2.0
10
−9
100
V
F
, FORWARD VOLTAGE (V)
Figure 1. Forward Characteristics
100
I
F
, PEAK FORWARD CURRENT (A)
80
60
40
20
0
P
TOT
, POWER DISSIPATION (W)
80
Figure 2. Reverse Characteristics
D = 0.1
60
D = 0.2
D = 0.3
D = 0.5
D = 0.7
25
50
D=1
75
100
125
150
175
40
20
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE
(
o
C)
T
C
, CASE TEMPERATURE
(
o
C)
Figure 3. Current Derating
30
Q
C
, CAPACITIVE CHARGE (nC)
1000
Figure 4. Power Derating
CAPACITANCE (pF)
0
100
200
300
400
500
600 650
20
100
10
0
10
0.1
1
10
100
650
V
R
, REVERSE VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 5. Capacitive Charge vs. Reverse
Voltage
Figure 6. Capacitance vs. Reverse Voltage
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3
FFSP0865B
TYPICAL CHARACTERISTICS
8
E
C
, CAPACITIVE ENERGY (
mJ)
6
4
2
0
0
100
200
300
400
500
600 650
V
R
, REVERSE VOLTAGE (V)
Figure 7. Capacitance Stored Energy
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
2
1
DUTY CYCLE−DESCENDING ORDER
D=0.5
0.1
D=0.2
D=0.1
0.01
D=0.01
SINGLE PULSE
10
−5
D=0.02
D=0.05
0.001
−6
10
10
−4
10
−3
10
−2
10
−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 8. Junction−to−Case Transient Thermal Response
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−2LD
CASE 340BB
ISSUE O
DATE 31 AUG 2016
A
10.67
9.65
4.09
3.50
0.36
M
3.43
2.54
B A
M
B
1.40
0.51
6.86
5.84
16.15
15.75
13.40
12.19
8.89
6.86
16.51
14.22
9.40
8.38
5°
3°
1
C
1.91
1.65
1.25
2
6.35 MAX
7°
3°
5°
3°
0.60 MAX
14.73
13.60
2.54
1.02
0.38
0.36
M
0.61
0.33
2.92
2.03
C A B
5.08
5°
3°
5°
3°
4.80
4.30
NOTES:
A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13832G
TO−220−2LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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