IPG20N06S4L-11
OptiMOS™-T2 Power-Transistor
Product Summary
V
DS
R
DS(on),max4)
I
D
60
11.2
20
V
mW
A
Features
• Dual N-channel Logic Level - Enhancement mode
PG-TDSON-8-4
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
IPG20N06S4L-11
Package
PG-TDSON-8-4
Marking
4N06L11
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
one channel active
Symbol
Conditions
T
C
=25 °C,
V
GS
=10 V
1)
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
one channel active
Avalanche energy, single pulse
2, 4)
Avalanche current, single pulse
4)
Gate source voltage
Power dissipation
one channel active
Operating and storage temperature
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
I
D
=10A
-
-
T
C
=25 °C
-
Value
Unit
I
D
20
A
20
80
165
15
±16
65
-55 ... +175
mJ
A
V
W
°C
Rev. 1.0
page 1
2010-10-05
IPG20N06S4L-11
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
2)
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
-
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
4)
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
= 28µA
V
DS
=60 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=60 V,
V
GS
=0 V,
T
j
=125 °C
2)
Gate-source leakage current
4)
Drain-source on-state resistance
4)
I
GSS
R
DS(on)
V
GS
=16 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=10 A
V
GS
=10 V,
I
D
=17 A
60
1.2
-
-
1.7
0.01
-
2.2
1
µA
V
-
-
-
-
100
60
2.3
-
-
K/W
-
-
-
-
5
-
12.5
9.5
100
100
15.8
11.2
nA
mW
Rev. 1.0
page 2
2010-10-05
IPG20N06S4L-11
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
2)
Input capacitance
4)
Output capacitance
4)
Reverse transfer capacitance
4)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2, 4)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
one channel active
Diode pulse current
2)
one channel active
Diode forward voltage
I
S
T
C
=25 °C
I
S,pulse
V
GS
=0 V,
I
F
=17 A,
T
j
=25 °C
V
R
=30 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
80
-
-
20
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=48 V,
I
D
=20 A,
V
GS
=0 to 10 V
-
-
-
-
10
4
41
3.2
13
8
53
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=30 V,
V
GS
=10 V,
I
D
=20 A,
R
G
=11
W
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
3090
720
34
11
3.0
58
19
4020
940
68
-
-
-
-
ns
pF
V
SD
-
0.95
1.3
V
Reverse recovery time
2)
t
rr
-
40
-
ns
Reverse recovery charge
2, 4)
1)
Q
rr
-
40
-
nC
Current is limited by bondwire; with an
R
thJC
= 2.3K/W the chip is able to carry 57A at 25°C.
Specified by design. Not subject to production test.
2)
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
Per channel
Rev. 1.0
page 3
2010-10-05
IPG20N06S4L-11
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥ 6 V; one channel active
2 Drain current
I
D
= f(T
C
);
V
GS
≥ 6 V; one channel active
70
25
60
20
50
15
P
tot
[W]
40
30
I
D
[A]
10
20
5
10
0
0
50
100
150
200
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25°C;
D
=0; one channel active
parameter:
t
p
100
1 µs
10 µs
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
100 µs
10
1 ms
10
0
0.5
Z
thJC
[K/W]
I
D
[A]
0.1
0.05
1
10
-1
0.01
single pulse
0.1
0.1
1
10
100
10
-2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2010-10-05
IPG20N06S4L-11
5 Typ. output characteristics
4)
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
80
10V 5 V 4.5 V
6 Typ. drain-source on-state resistance
4)
R
DS(on)
= f(I
D
);
T
j
= 25 °C
parameter:
V
GS
3V
3.5 V
4V
65
60
4V
55
40
3.5 V
R
DS(on)
[mW]
45
I
D
[A]
35
25
20
3V
15
4.5 V
10 V
0
0
1
2
3
4
5
5
0
20
40
60
80
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
4)
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
80
-55 °C
25 °C
8 Typ. drain-source on-state resistance
4)
R
DS(on)
= f(T
j
);
I
D
= 17 A;
V
GS
= 10 V
20
175 °C
17
60
R
DS(on)
[m
W
]
1
2
3
4
5
14
I
D
[A]
40
11
20
8
0
5
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2010-10-05
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