Portable communications, computing and video equipment manufacturers are challenging
the semiconductor industry to develop increasingly smaller electronic components.
Bourns offers small-signal Schottky Barrier Diodes for switching and rectification applications,
in a compact chip package compatible with SOD-123 size format. The Schottky Barrier Diodes
offer a forward current of 1 A with a choice of repetitive peak reverse voltage of 20 V and 40 V.
Absolute Maximum Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Rectified Current (TA = 55 °C)
Peak Forward Surge Current 8.3 ms Single Half Sine-Wave
Superimposed on Rated Load (JEDEC Method)
Operating Temperature Range
Storage Temperature Range
Symbol
V
RRM
I
F(AV)
I
FSM
T
STG
T
J
LE
AD
F
RE
E
*R
oH
S
CD123D-B1xR Schottky Barrier Chip Diode Series
C
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR
IA E
NT
*
CD123D-
B120R
20
B140R
40
1
20
-55 to +125
-55 to +150
B140LR
40
Unit
V
A
A
°C
°C
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
IF = 0.1A
CD123D-B120R
IF = 0.5 A
CD123D-B140R
IF = 1.0 A
IF = 0.1A
IF = 0.5 A
CD123D-B140LR
IF = 1.0 A
CD123D-B120R
CD123D-B140R
VR = V
RRM
CD123D-B140LR
CD123D-B120R
V
R
= 4 V,
CD123D-B140R
f = 1.0 MHz
CD123D-B140LR
Junction to Ambient
(1)
Junction to Case
(2)
Min.
Typ.
0.32
0.40
0.46
0.24
0.31
0.37
Max.
Unit
Instantaneous Forward Voltage
V
F
0.50
V
0.38
0.2
1.0
mA
Repetitive Peak Reverse Current
I
R
C
J
R
θJA
R
θJL
0.015
0.30
110
115
190
60
Junction Capacitance
Thermal Resistance
pF
°C/W
NOTES:
(1)
Pulse test width P
W
= 300 us, 1 % duty cycle.
(2)
Mounted on P.C. board with 2.73 x 1.6 mm and 0.86 x 1.6 mm copper pad areas.
Asia-Pacific:
Tel: +886-2 2562-4117 • Email: asiacus@bourns.com
EMEA:
Tel: +36 88 520 390 • Email: eurocus@bourns.com
The Americas:
Tel: +1-951 781-5500 • Email: americus@bourns.com
www.bourns.com
* RoHS Directive 2015/863, Mar 31, 2015 and Annex.
**Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br)
and Chlorine (Cl) content is 1500 ppm or less.
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
CD123D-B1xR Schottky Barrier Chip Diode Series
Performance Graphs - Model CD123D-B120R & CD123D-B140R
Forward Current Derating Curve
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
Maximum Non-Repetitive Peak Forward Surge Current
25
8.3 ms
Single Half Sine-Wave
Peak Forward Surge Current (A)
Average Forward Current (A)
20
15
10
5
0
1
10
100
Lead Temperature (°C)
Typical Forward Characteristics
10.00
Number of Cycles at 60 Hz
Typical Reverse Characteristics
100.00
Instantaneous Reverse Current (mA)
Instantaneous Forward Current (A)
10.00
TJ = 100 °C
1.00
1.00
0.10
0.10
TJ = 25 °C
0.01
0.01
0.001
TA = 25 °C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
.
0.001
0
20
40
60
80
100
Forward Voltage (V)
Typical Junction Capacitance
400
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVP-P
Percent of Rated Peak Reverse Voltage (%)
Junction Capacitance (pF)
100
10
0.1
1
10
100
Reverse Voltage (V)
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaim-
ers as set forth on the last page of this document, and at www.bourns.com/docs/legal/
disclaimer.pdf.
CD123D-B1xR Schottky Barrier Chip Diode Series
Performance Graphs - Model CD123D-B140LR
Forward Current Derating Curve
1.2
Maximum Non-Repetitive Peak Forward Surge Current
25
8.3 ms
Single Half Sine-Wave
Peak Forward Surge Current (A)
0
25
50
75
100
125
150
Average Forward Current (A)
1.0
0.8
0.6
0.4
0.2
0
20
15
10
5
0
Lead Temperature (°C)
Typical Forward Characteristics
10.00
1
10
100
Number of Cycles at 60 Hz
Typical Reverse Characteristics
100.00
Instantaneous Reverse Current (mA)
Instantaneous Forward Current (A)
10.00
TJ = 100 °C
1.00
1.00
0.10
TJ = 25 °C
0.10
0.01
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
.
0.001
0
20
40
60
80
100
Forward Voltage (V)
Typical Junction Capacitance
400
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVP-P
Percent of Rated Peak Reverse Voltage (%)
Junction Capacitance (pF)
100
10
0.1
1
10
100
Reverse Voltage (V)
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers
as set forth on the last page of this document, and at www.bourns.com/docs/legal/
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers
as set forth on the last page of this document, and at www.bourns.com/docs/legal/dis-
claimer.pdf.
A4
.
CDDFN5-0504N - TVS/Steering Diode Array
CD123D-B1xR Schottky Barrier Chip Diode Series
Packaging Information
The product will be dispensed in tape and reel format (see diagram below).
P
0
P
1
d
Index Hole
E
T
120 °
F
W
D2
D1 D
B
P
Trailer
A
Device
C
Leader
End
.......
.......
30 PITCHES
.......
.......
.......
.......
POLARITY STRIP
.......
.......
30 PITCHES
Start
W1
MM
DIMENSIONS:
(INCHES)
Direction of Feed
Devices are packed in accordance with EIA standard
EIA-481-D and specifications shown here.
CD123D-B1xR
2.20 ± 0.10
0.087 ± 0.004
3.65 ± 0.10
(0.144 ± 0.004)
1.75 ± 0.10
(0.069 ± 0.004)
1.50 ± 0.10
(0.059 ± 0.004)
178 ± 2.0
(7.008 ± 0.079)
50
MIN.
(1.969)
13.0 ± 0.5
(0.512 ± 0.020)
1.75 ± 0.10
(0.069 ± 0.004)
5.50 ± 0.05
(0.217 ± 0.002)
4.00 ± 0.10
(0.157 ± 0.004)
4.00 ± 0.10
(0.157 ± 0.004)
2.00 ± 0.10
(0.079 ± 0.004)
0.40
MAX.
(0.016)
12.00 ± 0.30
(0.472 ± 0.012)
18.7
MAX.
(0.736)
3000
Item
Carrier Width
Carrier Length
Carrier Depth
Sprocket Hole
Reel Outside Diameter
Reel Inner Diameter
Feed Hole Diameter
Sprocket Hole Position
Punch Hole Position
Punch Hole Pitch
Sprocket Hole Pitch
Embossment Center
Overall Tape Thickness
Tape Width
Reel Width
Quantity per Reel
Symbol
A
B
C
d
D
D1
D2
E
F
P
P0
P1
T
W
W1
--
REV. 11/17
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.
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