NJL5901AR
COBP PHOTO REFLECTOR
GENERAL DESCRIPTION
NJL5901AR is the compact surface mount type photo reflector in which Lead(Pb) – free reflow soldering is possible. It is
possible to perform reflow soldering temperature 260°C and 2 times. NJL5901R has realized the high output current and the
high S/N ratio combining a high output infrared LED and a high sensitivity Si photo-transister.
FEATURES
•
Pb free solder re-flowing permitted(260°C, 2times)
(0.47)
OUTLINE (typ.)
2.4
±
0.1
(1.47)
(0.73)
C
A
(1.05)
(0.33)
0.5
±
0.1
(0.1)
Unit : mm
0.65
±
0.1
0.2
±
0.1
0.65
±
0.1
•
Miniature, thin, surface mount 1.6mm
×
2.4mm
×
0.8mm
•
Built-in visible light cut-off filter
1.6
±
0.1
•
Detecting the location of CD/DVD optical pickup head
•
Detecting the location of lens for DSC and Cellular
Phone’s camera module
•
End detection of VCR tape
•
Rotation detection of various motors
0.8
±
0.1
E
PT CENTER
K
LED CENTER
0.85
(0.1)
APPLICATIONS
0.5
±
0.1
(0.1)
0.7
0.85
0.2
±
0.1
•
High output, high S/N ratio
(0.1)
A : anode
K : cathode
C : collector
E : emitter
PCB Pattern
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
Emitter
Forward Current (Continuous)
Reverse Voltage (Continuous)
Power Dissipation
Detector
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Collector Power Dissipation
Coupled
Total Power Dissipation
Operating Temperature
Storage Temperature
Reflow Soldering Temperature
SYMBOL
I
F
V
R
P
D
V
CEO
V
ECO
I
C
P
C
P
tot
T
opr
T
stg
T
sol
RATINGS
30
6
45
16
6
10
25
60
-20
to
+85
-40
to
+85
260
UNIT
mA
V
mW
V
V
mA
mW
mW
°C
°C
°C
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25°C)
PARAMETER
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
Dark Current
Collector-Emitter Voltage
Coupled
Output Current
Operating Dark Current *1
Rise Time
Fall Time
SYMBOL
V
F
I
R
C
t
I
CEO
V
CEO
I
O
I
CEOD
t
r
t
f
TEST CONDITION
I
F
=4mA
V
R
=6V
V
R
=0V,f=1MHz
V
CE
=10V
I
C
=100μA
I
F
=4mA,V
CE
=2V,d=0.7mm
I
F
=4mA,V
CE
=2V
I
O
=100μA,V
CE
=2V,RL=1K
Ω
,d=0.7mm
I
O
=100μA,V
CE
=2V,RL=1K
Ω
,d=0.7mm
MIN
TYP
MAX
1.3
10
UNIT
V
μA
pF
μA
V
μA
μA
μs
μs
0.9
—
—
—
16
180
—
—
25
—
0.2
—
—
—
—
30
30
—
450
2
—
—
—
—
—
*1 Icoed may increase according to the periphery situation of the surface mounted product.
0.5
0.4 0.5
14-Dec-10
-1-
NJL5901AR
OUTPUT CURRENT TEST CONDITION
The infrared signal from LED is reflected at the aluminum surface.
DARK CURRENT TEST CONDITION
Light Sealed Dark Box
Reflective
Objects
(0.8mm)
1.5mm
Io
I
F
I
F
I
CEOD
V
CE
V
CE
RESPONSE TIME TEST CONDITION
Aluminum
Evapolation
Surface
R
D
P.G
I
F
R
L
Io
V+
0.7mm
Input
90%
Output
10%
OSC
tr
tf
EDGE RESPONSE TEST CONDITION
l=0mm
l=0mm
0.7mm
Aluminum
Evaporation
Surface
Aluminum
Evaporation
Surface
0.7mm
Direction X
Direction Y
14-Dec-10
-2-
NJL5901AR
Power Dissipation vs. Temperature
100
90
80
Power Dissipation P(mW)
Forward Current IF(mA)
70
60
50
40
30
20
10
0
0
20
40
60
80
100
Ambient Temperature Ta(
°
C)
50
45
40
35
30
25
20
15
10
Forward Current vs. Temperature
Total Power
Dissipation
Collector Power
Dissipation
5
0
0
20
40
60
80
100
Ambient Temperature Ta(°C)
TYPICAL CHARACTERISTICS
Forward Voltage vs. Forward Current
100
1.6
Forward Voltage vs. Temperature
1.4
Forward Current IF(mA)
Forward Voltage VF(V)
IF=30mA
1.2
10
IF=4mA
1
1
0
1
Forward Voltage VF(V)
2
0.8
-40
-20
0
20
40
60
80
100
Ambient Temperature Ta(
°
C)
Dark Current vs. Temperature
10000
Operating Dark Current vs. Temperature
10
1000
Operating Dark Current Iceod(
μ
A)
Dark Current Iceo(nA)
100
1
10
1
0.1
0.1
Vce=10V
0.01
IF=4mA,Vce=2V
0.01
-40
-20
0
20
40
60
80
100
-40
-20
0
20
40
60
80
100
Ambient Temperature Ta(°C)
Ambient Temperature Ta(°C)
0.001
14-Dec-10
-3-
NJL5901AR
Output Current vs. Forward Current
(Ta=25
°
C)
1000
900
800
Output Current Io(
μ
A)
700
600
500
400
300
200
100
Relative Output Current Io/Io(25 C)(%)
°
100
120
Output Current vs. Temperature
80
60
40
20
IVce=2V,d=0.7m
0
0
2
4
6
8
10
Forward Current IF(mA)
0
-40
-20
0
20
40
IF=4mA,Vce=2V
60
80
100
Ambient Temperature Ta(
°
C)
Output Characteristics (Ta=25°C)
1000
900
800
0.5
Vce Saturation (Ta=25°C)
IF=10mA
0.4
IF=8mA
Output Current Io(
μ
A)
700
600
500
400
300
200
Collector-Emitter Voltage Vce(V)
0.3
Io=400μA
0.2
IF=6mA
IF=4mA
Io=300μA
Io=200μA
Io=100μA
0.1
IF=2mA
100
0
0
1
2
3
4
5
Collector-Emitter Voltage Vce(V)
0
0.1
1
Forward Current IF(mA)
10
Output Current vs. Distance (Ta=25°C)
120
Output Current vs. Edge Distance (Ta=25°C)
120
IF=4mA,Vce=2V,d=0.7mm
Relative Output Current Io/Io(max.)(%)
100
Relative Output Current Io/Io(max.)(%)
100
IF=4mA,Vce=2V
80
Direction Y
80
60
60
40
40
Direction X
20
20
0
0
1
2
3
4
5
Reflector Distance d(mm)
0
0
0.4
0.8
1.2
1.6
2
2.4
Edge Distance l(mm)
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-4-
NJL5901AR
Spectral Response (Ta=25
°
C)
120
1000
Switching Time vs. Load Resistance
(Ta=25
°
C)
100
Relative Response (%)
Vce=2V
80
Switching Time t(
μ
s)
100
tr
tf
60
td
10
40
20
Vce=2V,Io=100μA
1
600
700
800
900
1000
0.1
1
Load Resistance RL(k
Ω
)
10
Wavelength
λ
(nm)
0
500
14-Dec-10
-5-
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